Patents by Inventor María BERNECHEA NAVARRO

María BERNECHEA NAVARRO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10396231
    Abstract: The present invention relates to a photovoltaic material and a photovoltaic device comprising the photoactive material arranged between a hole transport layer and an electron acceptor layer. The present invention also relates to the use of the photovoltaic material.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: August 27, 2019
    Assignee: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES
    Inventors: Gerasimos Konstantatos, María Bernechea Navarro, Nichole Cates Miller
  • Publication number: 20170012159
    Abstract: The present invention relates to a photovoltaic material and a photovoltaic device comprising the photoactive material arranged between a hole transport layer and an electron acceptor layer. The present invention also relates to the use of the photovoltaic material.
    Type: Application
    Filed: July 8, 2016
    Publication date: January 12, 2017
    Applicant: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES
    Inventors: Gerasimos KONSTANTATOS, María BERNECHEA NAVARRO, Nichole Cates MILLER
  • Patent number: 9349888
    Abstract: Photovoltaic nanocomposite and solar cell device including the photovoltaic nanocomposite, where the photovoltaic nanocomposite includes a film of solution processed semiconductor materials having an n-type material selected from n-type quantum dots and n-type nanocrystals, and a p-type material selected from p-type quantum dots and p-type nanocrystals, and where the n-type material has a conduction band level at least equal, compared to vacuum level, to that of the p-type material, the p-type material has a valence band at the most equal, compared to vacuum level, to that of the n-type material. at least a portion of the n-type material and at least a portion of the p-type material are present in a bulk nano-heterojunction binary nanocomposite layer having a blend of the n-type material and the p-type material.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: May 24, 2016
    Assignee: FUNDACIO INSTITUT DE CIENCIES FOTONIQUES
    Inventors: Gerasimos Konstantatos, Arup Kumar Rath, Maria Bernechea Navarro, Luis Martinez Montblanch
  • Publication number: 20130263918
    Abstract: Photovoltaic nanocomposite and solar cell device including the photovoltaic nanocomposite, where the photovoltaic nanocomposite includes a film of solution processed semiconductor materials having an n-type material selected from n-type quantum dots and n-type nanocrystals, and a p-type material selected from p-type quantum dots and p-type nanocrystals, and where the n-type material has a conduction band level at least equal, compared to vacuum level, to that of the p-type material, the p-type material has a valence band at the most equal, compared to vacuum level, to that of the n-type material. at least a portion of the n-type material and at least a portion of the p-type material are present in a bulk nano-heterojunction binary nanocomposite layer having a blend of the n-type material and the p-type material.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 10, 2013
    Applicant: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES
    Inventors: GERASIMOS KONSTANTATOS, ARUP KUMAR RATH, MARIA BERNECHEA NAVARRO, LUIS MARTINEZ MONTBLANCH