Abstract: The invention relates to a method for determining a suppression factor of a suppression system. The suppression system is arranged to suppress migration of a contaminant gas out of a first system. The suppression factor is an indication of the performance of the suppression system. The method includes introducing a tracer gas in the sub-system, providing a detection system configured to detect the amount of tracer gas that has migrated out of the first system, determining a first suppression factor for the suppression system for the tracer gas. The method further includes determining a second suppression factor for the suppression system for the contaminant gas based on the first suppression factor.

Abstract: A sensor for use at substrate level in a high numerical aperture lithographic apparatus, the sensor having a transparent plate that covers a sensing element and includes elements that improve coupling of radiation into the sensing element. The improved coupling elements include a flowing liquid medium disposed between the transparent plate and the sensing element.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

Abstract: The invention relates to a method for determining a suppression factor of a suppression system. The suppression system is arranged to suppress migration of a contaminant gas out of a first system. The suppression factor is an indication of the performance of the suppression system. The method includes introducing a tracer gas in the sub-system, providing a detection system configured to detect the amount of tracer gas that has migrated out of the first system, determining a first suppression factor for the suppression system for the tracer gas. The method further includes determining a second suppression factor for the suppression system for the contaminant gas based on the first suppression factor.

Abstract: A method and apparatus make use of data representing changes in wavelength of a radiation source to provide control of focal plane position or to provide correction of sensor data. In the first aspect, the wavelength variation data is provided to control systems that control focus by moving apparatus components including, for example, the mask table, the substrate table or optical elements of the projection optical system. In the second aspect, variation data is used in correcting, e.g., focal plane position data measured by an inboard sensor, such as a transmitted image sensor. The two aspects may be combined in a single apparatus or may be used separately.

Abstract: A method and apparatus make use of data representing changes in wavelength of a radiation source to provide control of focal plane position or to provide correction of sensor data. In the first aspect, the wavelength variation data is provided to control systems that control focus by moving apparatus components including, for example, the mask table, the substrate table or optical elements of the projection optical system. In the second aspect, variation data is used in correcting, e.g., focal plane position data measured by an inboard sensor, such as a transmitted image sensor. The two aspects may be combined in a single apparatus or may be used separately.

Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Abstract: A sensor for use at substrate level in a high numerical aperature lithographic apparatus, the sensor having a transparent plate that covers a sensing element and includes elements that improve coupling of radiation into the sensing element. The elements include Fresnel lenses, holographic optical elements, inverted Winston Cones, spherical lenses and surface roughening.

Abstract: A sensor for use at substrate level in a high numerical aperature lithographic apparatus, the sensor having a transparent plate that covers a sensing element and includes elements that improve coupling of radiation into the sensing element. The elements include Fresnel lenses, holographic optical elements, inverted Winston Cones, spherical lenses and surface roughening.

Abstract: A method and lithographic apparatus in which a surface of a sensor is protected from dissolution in a liquid through application of a bias voltage to the surface with respect to one or more parts which are also exposed to the liquid.