Patents by Inventor Marc BOCQUET

Marc BOCQUET has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a non-volatile memory cell, non-volatile memory cell formed according to said method and microelectronic device comprising such memory cells
    Patent number: 10355207
    Abstract: A method for forming a non-volatile memory cell intended to switch the memory cell from an unformed state to a formed state, the memory cell including an ordered stack of a lower electrode, a layer of insulating material and an upper electrode. The forming method includes a breakdown operation in which at least one laser shot is emitted towards the layer of insulating material to make the layer of insulating material active by making it pass from a high resistance state to a low resistance state, the memory cell being formed when the layer of insulating material is active.
    Type: Grant
    Filed: March 21, 2018
    Date of Patent: July 16, 2019
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE D'AIX-MARSEILLE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
    Inventors: Alexis Krakovinsky, Marc Bocquet, Jean Coignus, Vincenzo Della Marca, Jean-Michel Portal, Romain Wacquez
  • METHOD FOR FORMING NON-VOLATILE MEMORY CELL, NON-VOLATILE MEMORY CELL FORMED ACCORDING TO SAID METHOD AND MICROELECTRONIC DEVICE COMPRISING SUCH MEMORY CELLS
    Publication number: 20180277760
    Abstract: A method for forming a non-volatile memory cell intended to switch the memory cell from an unformed state to a formed state, the memory cell including an ordered stack of a lower electrode, a layer of insulating material and an upper electrode. The forming method includes a breakdown operation in which at least one laser shot is emitted towards the layer of insulating material to make the layer of insulating material active by making it pass from a high resistance state to a low resistance state, the memory cell being formed when the layer of insulating material is active.
    Type: Application
    Filed: March 21, 2018
    Publication date: September 27, 2018
    Inventors: Alexis KRAKOVINSKY, Marc BOCQUET, Jean COIGNUS, Vincenzo DELLA MARCA, Jean-Michel PORTAL, Romain WACQUEZ