Abstract: Methods and apparatus are provided for configuring a Schottky diode with reduced reverse leakage current. The apparatus comprises a dielectric layer interposed between a Schottky metal layer and a Schottky semiconductor layer. The dielectric layer is patterned to allow a limited amount of direct contact between the metal layer and the semiconductor layer, thereby controlling the size and configuration of the Schottky diode active area. Limiting the amount of active diode area can reduce the probability of leakage current due to localized shunts. Moreover, the dielectric layer can also be configured to inhibit diffusion from the metal layer to the semiconductor layer. Accordingly, the reverse leakage current of a Schottky diode with dielectric isolation is typically lower than that of a similar diode with no dielectric layer.