Abstract: An adaptive gate driver for a driving a power MOSFET to switch is disclosed. The adaptive gate driver includes a load sense circuit to sense a current through the power MOSFET. A controller coupled to the load sense circuit compares the sensed current to a threshold to determine if the load on the power MOSFET is a normal load or a heavy load. Based on the comparison, the controller controls the gate driver to drive the power MOSFET with a first strength level when a normal load determined and at second strength level when a heavy load is determined. The driving strength in the heavy-load condition is lower than the normal-load condition and by lowering the driving strength of the gate driver during the heavy-load condition a voltage across the power MOSFET may be prevented from exceeding a threshold related to a breakdown condition during a switching period.

Abstract: The present disclosure describes a power stage. The power stage includes a metal-oxide semiconductor field-effect transistor (MOSFET) and a driver IC coupled to the MOSFET. The driver IC is configured to switch the MOSFET to an ON-state so that MOSFET conducts a current. The driver IC includes a current monitor circuit that outputs a current monitor signal, which corresponds to the current through the MOSFET when it is in the ON-state. The current monitor signal includes an error caused by a temperature difference between the MOSFET and the driver IC. As a result, the driver IC further includes a compensation circuit that is configured to determine a thermal gradient across the driver IC, and based on the thermal gradient, adjust the current monitor circuit to reduce the error.

Abstract: An adaptive gate driver for a driving a power MOSFET to switch is disclosed. The adaptive gate driver includes a load sense circuit to sense a current through the power MOSFET. A controller coupled to the load sense circuit compares the sensed current to a threshold to determine if the load on the power MOSFET is a normal load or a heavy load. Based on the comparison, the controller controls the gate driver to drive the power MOSFET with a first strength level when a normal load determined and at second strength level when a heavy load is determined. The driving strength in the heavy-load condition is lower than the normal-load condition and by lowering the driving strength of the gate driver during the heavy-load condition a voltage across the power MOSFET may be prevented from exceeding a threshold related to a breakdown condition during a switching period.

Abstract: An adaptive gate driver for a driving a power MOSFET to switch is disclosed. The adaptive gate driver includes a load sense circuit to sense a current through the power MOSFET. A controller coupled to the load sense circuit compares the sensed current to a threshold to determine if the load on the power MOSFET is a normal load or a heavy load. Based on the comparison, the controller controls the gate driver to drive the power MOSFET with a first strength level when a normal load determined and at second strength level when a heavy load is determined. The driving strength in the heavy-load condition is lower than the normal-load condition and by lowering the driving strength of the gate driver during the heavy-load condition a voltage across the power MOSFET may be prevented from exceeding a threshold related to a breakdown condition during a switching period.

Abstract: The present disclosure describes a power stage. The power stage includes a metal-oxide semiconductor field-effect transistor (MOSFET) and a driver IC coupled to the MOSFET. The driver IC is configured to switch the MOSFET to an ON-state so that MOSFET conducts a current. The driver IC includes a current monitor circuit that outputs a current monitor signal, which corresponds to the current through the MOSFET when it is in the ON-state. The current monitor signal includes an error caused by a temperature difference between the MOSFET and the driver IC. As a result, the driver IC further includes a compensation circuit that is configured to determine a thermal gradient across the driver IC, and based on the thermal gradient, adjust the current monitor circuit to reduce the error.

Abstract: An adaptive gate driver for a driving a power MOSFET to switch is disclosed. The adaptive gate driver includes a load sense circuit to sense a current through the power MOSFET. A controller coupled to the load sense circuit compares the sensed current to a threshold to determine if the load on the power MOSFET is a normal load or a heavy load. Based on the comparison, the controller controls the gate driver to drive the power MOSFET with a first strength level when a normal load determined and at second strength level when a heavy load is determined. The driving strength in the heavy-load condition is lower than the normal-load condition and by lowering the driving strength of the gate driver during the heavy-load condition a voltage across the power MOSFET may be prevented from exceeding a threshold related to a breakdown condition during a switching period.

Abstract: An adaptive gate driver for a driving a power MOSFET to switch is disclosed. The adaptive gate driver includes a load sense circuit to sense a current through the power MOSFET. A controller coupled to the load sense circuit compares the sensed current to a threshold to determine if the load on the power MOSFET is a normal load or a heavy load. Based on the comparison, the controller controls the gate driver to drive the power MOSFET with a first strength level when a normal load determined and at second strength level when a heavy load is determined. The driving strength in the heavy-load condition is lower than the normal-load condition and by lowering the driving strength of the gate driver during the heavy-load condition a voltage across the power MOSFET may be prevented from exceeding a threshold related to a breakdown condition during a switching period.

Abstract: A circuit for controlling the switching behavior of a field effect transistor (FET) or other power switch in a power supply or converter. The circuit includes an adaptive feedback loop which controls the switching operation of the FET through application of a gate drive signal to the device. The circuit is designed to turn the switching device on or off at the optimum time to reduce the stress and power losses associated with the switching action. The circuit includes a capacitor connected to the FET switch drain to sense the falling voltage across the switch. The adaptive gate drive circuit holds the FET switch off until the drain voltage sensed by the capacitor stops decreasing. At this time, the FET switch voltage is either zero (zero-voltage switching) or has reached the minimum value of its resonant ring (low-voltage switching).