Abstract: A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Abstract: A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: Apparatus for dispensing liquid chemicals such as photoresist from containers, in particular, from collapsible pouch-type containers.

Abstract: A storage container is formed by joining together the sides and top of a pair of matched laminated flat sheets. The bottom portions are joined together adjacent the sides, but the center is sealed along the sealing surfaces of a tube connector assembly, the connector portion being in the form of a parallel pipe head, the center of which is enclosed a tube. The tube extends through the connector and projects outwardly therefrom to provide a closable access path for filling and draining the container. The projected portion of said tube is corrugated.A sleeve is formed along the top edge of the sealed top portion of sealed container and a stiffener rod is installed in the sleeve to provide a more stable structure for handling when the container is filled. Below the sleeve and horizontally centered is a hook mounting aperture for holding the container in the drain position.