Abstract: Equipment (1) with which to fuse to each other at least two superposed laminar bands (2) and comprising two compressing members (3, 4) subtending between themselves a compression gap (5) through which said laminar bands (2) are guided. Additionally the equipment (1) comprises a laser (7) configured in a manner to transmit laser radiation (8) passing through the first compression member (3) and the compression gap (5) in the direction of the second compression member (4). According to the invention, the second compression member (4) is constituted by a resiliently borne sheetmetal-like support (9) which mechanically resiliently loads the laminar bands (2) in the compression gap (5) in the direction of the first compression member (3).

Abstract: A method of soldering metallic join partners (4, 5) which are coated with soldering material, wherein the layers of soldering material of the join partners (4, 5) are pressed together and melted in a soldering region (6), molten masses of liquid soldering material forming which, after being mixed, in the solidified state connect the join partners (4, 5) in the soldering region (6), before solidification a mechanical pulse being transmitted to the molten masses of liquid soldering material.

Abstract: Equipment (1) with which to fuse to each other at least two superposed laminar bands (2) and comprising two compressing members (3, 4) subtending between themselves a compression gap (5) through which said laminar bands (2) are guided. Additionally the equipment (1) comprises a laser (7) configured in a manner to transmit laser radiation (8) passing through the first compression member (3) and the compression gap (5) in the direction of the second compression member (4). According to the invention, the second compression member (4) is constituted by a resiliently borne sheetmetal-like support (9) which mechanically resiliently loads the laminar bands (2) in the compression gap (5) in the direction of the first compression member (3).

Abstract: The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber. Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber by means of non-continuous injection of a liquid starting material or a starting material dissolved in a liquid using a respective injector unit. Said vapor is guided to the process chamber by means of a carrier gas. It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit, determining the time response of the flow of material through each injector unit. The pressure in the process chamber is less than 100 mbars, the process chamber is tempered and several series of layers are deposited on the substrate during one process step.

Abstract: The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber. Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber by means of non-continuous injection of a liquid starting material or a starting material dissolved in a liquid using a respective injector unit. Said vapor is guided to the process chamber by means of a carrier gas. It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit, determining the time response of the flow of material through each injector unit. The pressure in the process chamber is less than 100 mbars, the process chamber is tempered and several series of layers are deposited on the substrate during one process step.

Abstract: A CVD reactor comprising: a reactor casing with a casing cover, a heated susceptor for one wafer or several wafers, which is disposed in the reactor casing, a fluid inlet unit including a plurality of openings facing said wafer or wafers through which the CVD media, which is moderately heated, enter the reactor, and a fluid outlet disposed on the periphery of the reactor casing, through which the introduced media is discharged; wherein the fluid outlet has roughly the shape of a disk with a plurality of outlet openings for the discharge of CVD media, and is disposed between the susceptor and the reactor cover in such a way that the fluid outlet is heated by the susceptor by radiation and hence adjusts itself to a temperature between the temperature of the susceptor and the reactor cover through which the CVD media enter in a moderately heated state.

Abstract: Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1 <m/h and approximately 500 <m/h, the overall pressure is varied between approximately 80 mbar and approximately 1 mbar.