Abstract: In different exemplary embodiments, a solar cell is provided, including: a substrate with a first region and a second region, wherein the first region includes at least a first electrical conductivity and the second region includes at least a second electrical conductivity which is greater than the first electrical conductivity; and a passivation on the surface of the substrate; and a contact-structure on the surface of the substrate, wherein the contact-structure includes a plurality of contacts; wherein two contacts of the plurality of contacts are disposed at a first distance with respect to each other in the first region; wherein two further contacts of the plurality of contacts are disposed at a second distance with respect to each other in the second region; and wherein the second distance is greater than the first distance.

Abstract: Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Abstract: A device for the production of silicon blocks comprises a vessel for receiving a silicon melt, the vessel comprising a vessel wall comprising at least one side wall and a bottom as well as an inside and an outside and a central longitudinal axis, and means for creating a temperature field on the inside of the bottom, the temperature field having a temperature gradient at the bottom of the vessel which is perpendicular to the central longitudinal axis at least in some regions when the silicon melt cools down for crystallization.

Abstract: In order to produce silicon wafers, liquid ultra-pure silicon is solidified on a silicon monocrystalline seed arranged in the bottom area of a crucible and having a seed surface comprising a {110}-crystal orientation and an edge surface having a {100}-crystal orientation starting from the bottom of the crucible, thus forming a silicon block on the seed surface of the silicon monocrystalline seed which largely takes over the {110}-crystal orientation. Subsequently, the silicon block is divided into wafers with a wafer surface having a {100}-crystal orientation.

Abstract: The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2).

Abstract: The invention relates to compounds of the formula (I), where the groups R1, M, A, B, D, L, and R have the specified meanings, and to the physiologically compatible salts thereof. The compounds are suitable, for example, for treating metabolic syndrome, insulin resistance, obesity, and diabetes.

Abstract: In different exemplary embodiments, a solar cell is provided, including: a substrate with a first region and a second region, wherein the first region includes at least a first electrical conductivity and the second region includes at least a second electrical conductivity which is greater than the first electrical conductivity; and a passivation on the surface of the substrate; and a contact-structure on the surface of the substrate, wherein the contact-structure includes a plurality of contacts; wherein two contacts of the plurality of contacts are disposed at a first distance with respect to each other in the first region; wherein two further contacts of the plurality of contacts are disposed at a second distance with respect to each other in the second region; and wherein the second distance is greater than the first distance.

Abstract: Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Abstract: A method for producing silicon blocks comprises providing a crucible for receiving a silicon melt, with a base and a plurality of side walls connected to the base, attaching nuclei at least on an inner side of the base of the crucible, the nuclei having a melt temperature, which is greater than the melt temperature of silicon, filling the crucible with the silicon melt, solidifying the silicon melt beginning on the nuclei and removing the solidified silicon from the crucible.

Abstract: The invention relates to compounds of the formula (I), where the groups R1, M, A, B, D, L, and R have the specified meanings, and to the physiologically compatible salts thereof. The compounds are suitable, for example, for treating metabolic syndrome, insulin resistance, obesity, and diabetes.

Abstract: A device for the production of silicon blocks comprises a vessel for receiving a silicon melt, the vessel comprising a vessel wall comprising at least one side wall and a bottom as well as an inside and an outside and a central longitudinal axis, and means for creating a temperature field on the inside of the bottom, the temperature field having a temperature gradient at the bottom of the vessel which is perpendicular to the central longitudinal axis at least in some regions when the silicon melt cools down for crystallization.

Abstract: In order to produce silicon wafers, liquid ultra-pure silicon is solidified on a silicon monocrystalline seed arranged in the bottom area of a crucible and having a seed surface comprising a {110}-crystal orientation and an edge surface having a {100}-crystal orientation starting from the bottom of the crucible, thus forming a silicon block on the seed surface of the silicon monocrystalline seed which largely takes over the {110}-crystal orientation. Subsequently, the silicon block is divided into wafers with a wafer surface having a {100}-crystal orientation.

Abstract: Device for the production of silicon blocks, the device comprising a vessel for receiving a silicon melt with a bottom, an inside, an outside and a central longitudinal axis and at least one support plate which is at least partially in direct contact with the bottom, and which forms a base together with the bottom, and means for generating an inhomogeneous temperature field on the inside of the bottom.

Abstract: The invention relates to heterocyclic derivatives of formula I wherein R, R1, A, B, D, M, L and n are as defined herein, or their physiologically compatible salts, their pharmaceutical compositions and their uses as SCD1 inhibitors.

Abstract: The invention relates to heterocyclic derivatives of formula I wherein R, R1, A, B, D, M, L and n are as defined herein, or their physiologically compatible salts, their pharmaceutical compositions and their uses as SCD1 inhibitors.

Abstract: The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2).

Abstract: The invention relates to azoloarine derivatives of formula I wherein R, A, B, D, Y, X, M and W are as defined herein, and their physiologically tolerated salts.

Abstract: The invention relates to heterocyclic derivatives of formula I wherein R, R1, A, B, D, M, L and n are as defined herein, or their physiologically compatible salts, their pharmaceutical compositions and their uses as SCD1 inhibitors.

Abstract: The invention concerns the use of MGC4504 protein, a functional derivative or fragment thereof, or a nucleic acid coding for said protein, derivative or fragment, for the identification of substances active in preventing or treating a disease associated with or caused by a malfunction of the carbohydrate or lipid metabolism.

Abstract: Oven for non-metal melting, in particular silicon melting, with a housing enclosing an interior, at least one mould arranged in the interior for receiving a non-metal melt, at least one electrical heating device enclosing, at least partially, the at least one mould for influencing the temperature of the non-metal melt, and a power supply device connected in an electrically conductive manner to the at least one heating device for providing the heating device with a time-variable current I(t), wherein the current I(t) has a frequency of 0.1 Hz to 1000 Hz and the current I(t) is of a magnitude sufficient for setting a predetermined temperature of the non-metal melt, the currents in the plurality, where necessary, of heaters having a defined phase position in respect of one another.