Abstract: Optical sensing apparatus (20) includes an array (28) of emitters (50), which emit pulses of optical radiation at different, respective times in response to a control input applied to the array. A receiver (26) includes a plurality of detectors (40), which output signals indicative of times of arrival of photons at the detectors. Optics (30, 32) project the optical radiation from the emitters onto respective locations in a scene and image the respective locations onto corresponding pixels of the receiver. A controller (44) controls the emitters to emit the output pulses in a predefined spatio-temporal sequence, and collects and processes the signals output by corresponding pixels in synchronization with the spatio-temporal sequence so as to measure respective times of flight of the pulses to and from the respective locations in the scene.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An electronic device includes a substrate, a set of light emitters on the substrate and arranged in a plurality of axisymmetric light emitter groups, a set of lenses including a different lens disposed over each axisymmetric light emitter group of the plurality of axisymmetric light emitter groups, and a set of optical fibers. At least one optical fiber in the set of optical fibers has a proximal end, a distal end, and a bend between the proximal end and the distal end. The proximal end is positioned to receive light, through a respective lens in the set of lenses, from the light emitters of a respective axisymmetric light emitter group in the plurality of axisymmetric light emitter groups.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optoelectronic device includes a first semiconductor die, having first front and rear surfaces and including at least one avalanche photodetector configured to output electrical pulses in response to photons incident on the first front surface. A second semiconductor die has a second front surface, which is bonded to the first rear surface, and a second rear surface, and includes a photodetector receiver analog circuit coupled to the at least one avalanche photodetector and an emitter driver circuit configured to drive a pulsed optical emitter. A third semiconductor die has a third front surface, which is bonded to the second rear surface, and a third rear surface, and includes logic circuits coupled to control the photodetector receiver analog circuit and the emitter driver circuit and to receive and process the electrical pulses output by the at least one avalanche photodetector.

Abstract: An optoelectronic device includes a semiconductor substrate with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack. A second set of epitaxial layers formed over the first set defines a quantum well structure, and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack. At least the third set of epitaxial layers is contained in a mesa having sides that are perpendicular to the epitaxial layers. A dielectric coating extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.

Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

Abstract: Optical sensing apparatus (20) includes an array (28) of emitters (50), which emit pulses of optical radiation at different, respective times in response to a control input applied to the array. A receiver (26) includes a plurality of detectors (40), which output signals indicative of times of arrival of photons at the detectors. Optics (30, 32) project the optical radiation from the emitters onto respective locations in a scene and image the respective locations onto corresponding pixels of the receiver. A controller (44) controls the emitters to emit the output pulses in a predefined spatio-temporal sequence, and collects and processes the signals output by corresponding pixels in synchronization with the spatio-temporal sequence so as to measure respective times of flight of the pulses to and from the respective locations in the scene.

Abstract: The method comprises providing a time-to-digital converter with a measurement period (3) for registration of events (1), and selecting time intervals of independent durations (4), each of the durations being independent of the registration of events. At each registration of an event, the time-to-digital converter is blocked from further registration for one of the time intervals of independent duration. Thus the recorded lengths of the time intervals (11, 13, 14, 16) corresponding to the occurrence of the events within each measurement period are uniformly distributed and a time-domain bias is avoided. The time-to-digital converter circuit includes a controlled gate for blocking the time-to-digital converter.

Abstract: A method for manufacturing includes fabricating an array (22) of vertical emitters (32) by deposition of multiple epitaxial layers on a III-V semiconductor substrate (20), and fabricating control circuits (30) for the vertical emitters on a silicon substrate (26). Respective front sides (52) of the vertical emitters are bonded to the silicon substrate in alignment with the control circuits. After bonding the respective front sides, the III-V semiconductor substrate is thinned away from respective back sides (50) of the vertical emitters, and metal traces (78) are deposited over the vertical emitters to connect the vertical emitters to the control circuits.

Abstract: An optoelectronic device (10) includes a semiconductor substrate (20) and a monolithic array (100) of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters (102, 156), configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters (104, 105, 158), configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

Abstract: A ranging device includes an array of photon detection devices that receive an optical signal reflected by an object in an image scene and first and second logic devices to respectively combine the outputs of first and second pluralities of the photon detection devices. First and second counter circuits are respectively coupled an output of the first and second logic devices and generate first and second count values respectively by counting the photon detection events generated by the first and second pluralities of photon detection devices. A range estimation circuit estimates the range of the object by estimating the timing of one or more pulses of said optical signal based on the first and second count values.

Abstract: A method for controlling an apparatus, includes steps of: determining distance measurements of an object in a first direction, using distance sensors defining between them a second direction different from the first direction, assessing a first inclination of the object in relation to a second direction based on the distance measurements, and determining a first command of the apparatus according to the inclination assessment.

Abstract: A circuit may include an array of single photon avalanche diode (SPAD) cells, each SPAD cell configured to be selectively enabled by an activation signal. The circuit may include a control circuit configured to selectively enable a subset of the array of SPAD cells based on a measured count rate of the array of SPAD cells.

Abstract: The method comprises providing a time-to-digital converter with a measurement period (3) for registration of events (1), and selecting time intervals of independent durations (4), each of the durations being independent of the registration of events. At each registration of an event, the time-to-digital converter is blocked from further registration for one of the time intervals of independent duration. Thus the recorded lengths of the time intervals (11, 13, 14, 16) corresponding to the occurrence of the events within each measurement period are uniformly distributed and a time-domain bias is avoided. The time-to-digital converter circuit includes a controlled gate for blocking the time-to-digital converter.

Abstract: A ranging device includes an array of photon detection devices adapted to receive an optical signal reflected by an object in an image scene. First and second logic devices are adapted to respectively combine the outputs of first and second pluralities of the photon detection devices. A first range detection circuit is coupled to outputs of the first and second logic devices and a first counter is coupled to the output of the first logic device and adapted to generate a first pixel value by counting events generated by the first plurality of photon detection devices. A second counter is coupled to the output of the second logic device and is adapted to generate a second pixel value by counting events generated by the second plurality of photon detection devices. The first and second pixel values may be used in estimating a range to the object in the image scene.

Abstract: A method is for estimating a distance to an object. The method may include determining, by a ranging device, a first range value based upon a time of flight of first optical pulses having a period of a first duration, and determining, by the ranging device, a second range value based upon a time of flight of second optical pulses having a period of a second duration different from the first duration. The method may include estimating the distance based upon the first and second range values.