Abstract: An RF filter (BPF) with an increased bandwidth is provided. The filter comprises a half-lattice topology and a phase shifter (PS) comprising inductively coupled inductance elements in a parallel branch parallel to a first segment (S1) of a signal path (SP) between a first port (P1) and a second port (P2) of the filter.

Abstract: An apparatus is disclosed for implementing a surface-acoustic-wave (SAW) filter with dielectric material disposed in a piezoelectric layer. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer, an electrode structure, and dielectric material. The piezoelectric layer has at least one channel. The dielectric material is disposed in the at least one channel of the piezoelectric layer and is at least partially covered by the electrode structure.

Abstract: An apparatus is disclosed for a bridge-type filter. In example aspects, the apparatus includes a filter circuit having a first port, a second port, and a filter core. The filter core is coupled between the first port and the second port. The filter core includes at least one transformer, a first resonator arrangement, and a second resonator arrangement. The first resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators. The second resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators.

Abstract: An apparatus is disclosed for a lattice-type filter. In example aspects, the apparatus includes a filter circuit having a first port that is single-ended and a second port that is single-ended. The filter circuit also includes a transformer, a first resonator, a second resonator, a third resonator, and a fourth resonator. The transformer includes a first terminal, a second terminal, and a third terminal, with the third terminal coupled to the second port. The first resonator is coupled between the first port and the first terminal of the transformer. The second resonator is coupled between the first port and the second terminal of the transformer. The third resonator is coupled between the first terminal of the transformer and a ground. The fourth resonator is coupled between the second terminal of the transformer and the ground.

Abstract: Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) resonator comprising a first apodized interdigital transducer (IDT) disposed between a first busbar and a second busbar, and a second SAW resonator comprising a second apodized IDT disposed between the second busbar and a third busbar, wherein the second busbar is at an angle with respect to at least one of the first busbar or the third busbar.

Abstract: An electronic filter comprises a high pass section (110) and a low pass section (120). The high pass section includes at least one filter stage of a series-connected acoustic resonator (111) and a parallel connected inductor (114). The low pass section comprises at least one filter stage including a series-connected inductor (121) and a parallel connected acoustic resonator (123). The filter is useful for a communication device covering the n79 5G band.

Abstract: Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.

Abstract: Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators configured to systematically modify phase characteristics of an antenna reflection coefficient. One aspect is a wireless communication apparatus comprising an acoustic resonator having a first resonator side and a second resonator side, the first resonator side coupled to a first signal connection port, a first capacitor including a first side coupled to the first resonator side and the first signal connection port, the first capacitor further including a second side coupled to a ground connection port, and a second capacitor including a first side coupled to the ground connection port, the second capacitor further including a second side, the second resonator side and the second side of the second capacitor coupled to an output port.

Abstract: An RF filter (BPF) with an increased bandwidth is provided. The filter comprises a half-lattice topology and a phase shifter (PS) comprising inductively coupled inductance elements in a parallel branch parallel to a first segment (S1) of a signal path (SP) between a first port (P1) and a second port (P2) of the filter.

Abstract: Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) resonator comprising a first apodized interdigital transducer (IDT) disposed between a first busbar and a second busbar, and a second SAW resonator comprising a second apodized IDT disposed between the second busbar and a third busbar, wherein the second busbar is at an angle with respect to at least one of the first busbar or the third busbar.

Abstract: An electronic component comprises a piezoelectric substrate (1) and an interdigital capacitor (2) on top of the piezo-electric substrate. The interdigital capacitor comprises two electrodes (21, 22), each of the electrodes comprising a plurality of fingers (23). The fingers each comprise an associated first metal layer (231) and at least some of the fingers comprise an associated second metal layer (232) on top of the first metal layer. For each finger comprising a first and a second metal layer a width of the finger in the region of the associated first metal layer is larger than the width of the finger in the region of the associated second metal layer.

Abstract: An electronic filter comprises a high pass section (110) and a low pass section (120). The high pass section includes at least one filter stage of a series-connected acoustic resonator (111) and a parallel connected inductor (114). The low pass section comprises at least one filter stage including a series-connected inductor (121) and a parallel connected acoustic resonator (123). The filter is useful for a communication device covering the n79 5G band.