Abstract: A method for manufacturing a micromechanical environmental barrier chip includes providing a substrate having a first surface and an opposite second surface, depositing a material layer having a different etch characteristic than the substrate onto the first surface, creating a microstructured micromechanical environmental barrier structure on top of the material layer by applying a microstructuring process, applying an anisotropic etching process comprising at least one etching step for anisotropically etching from the second surface towards the first surface to create at least a cavity underneath the micromechanical environmental barrier structure, the cavity extending between the second surface and the material layer, and removing the material layer underneath the micromechanical environmental barrier structure to expose the environmental barrier structure.

Abstract: A method for manufacturing a MEMS pressure transducer chip with a hybrid integrated environmental barrier structure includes a step of providing a substrate comprising at least one membrane, a step of structuring a stepped recess structure into the substrate, the stepped recess structure comprising a first recess having a first lateral width and an adjacent second recess having a larger second lateral width, where the stepped recess structure extends between the membrane and a substrate surface opposite to the membrane, and a step of arranging an environmental barrier structure inside the second recess.

Abstract: A method for manufacturing a MEMS microphone device with a monolithically integrated environmental barrier structure includes providing a substrate structure including a base substrate and an additional substrate material layer deposited on the base substrate, creating a micromechanical environmental barrier structure in the substrate structure by applying a microstructuring process, where the micromechanical environmental barrier structure is configured to let a first amount of air pass through while preventing a second amount of at least one of moisture, liquid, oil or solid environmental particles from passing through, and creating a MEMS sound transducer structure in the additional substrate material of the substrate structure by applying a microstructuring process.

Abstract: An encapsulated MEMS device and a method for manufacturing the MEMS device are provided. The method comprises providing a cavity structure having an inner volume comprising a plurality of MEMS elements, which are relatively displaceable with respect to each other, and having an opening structure to the inner volume, depositing a Self-Assembled Monolayer (SAM) through the opening structure onto exposed surfaces within the inner volume of the cavity structure, and closing the cavity structure by applying a layer structure on the opening structure for providing a hermetically closed cavity.

Abstract: A MEMS device includes a first deflectable membrane structure, a rigid electrode structure and a second deflectable membrane structure in a vertically spaced configuration. The rigid electrode structure is arranged between the first and second deflectable membrane structures. The first and second deflectable membrane structures each includes a deflectable portion, and the deflectable portions of the first and second deflectable membrane structures are mechanically coupled by mechanical connection elements to each other and are mechanically decoupled from the rigid electrode structure. At least a subset of the mechanical connection elements are elongated mechanical connection elements.

Abstract: A MEMS device comprises a housing with an interior volume, wherein the housing includes an access port to the interior volume; a MEMS sound transducer in the housing, and a mechanical barrier structure having a plate element that is fixed by elastic spacers to a carrier and overlaps the access port, and providing a ventilation path passing a boundary region of the plate element, wherein a clearance of the ventilation path is set by the distance of the boundary region of the plate element to the housing or by the distance of the boundary region of the plate element to a blocking structure that opposes the boundary region of the plate element.

Abstract: An embodiment as described herein includes a microelectromechanical system (MEMS) with a first MEMS transducer element, a second MEMS transducer element, and a semiconductor substrate. The first and second MEMS transducer elements are disposed at a top surface of the semiconductor substrate and the semiconductor substrate includes a shared cavity acoustically coupled to the first and second MEMS transducer elements.

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

Abstract: A micromechanical capacitive converter and a method for manufacturing a micromechanical converter comprise a movable membrane and an electrically conductive face element in a carrier layer. The electrically conductive face element is arranged opposite the membrane above a cavity. The electrically conductive face element and the carrier layer are perforated by perforation openings. The opening width of the perforation openings corresponds approximately to the thickness of the carrier layer.

Abstract: A micromechanical capacitive converter and a method for manufacturing a micromechanical converter comprise a movable membrane and an electrically conductive face element in a carrier layer. The electrically conductive face element is arranged opposite the membrane above a cavity. The electrically conductive face element and the carrier layer are perforated by perforation openings. The opening width of the perforation openings corresponds approximately to the thickness of the carrier layer.

Abstract: A micromechanical capacitive converter and a method for manufacturing a micromechanical converter comprise a movable membrane and an electrically conductive face element in a carrier layer. The electrically conductive face element is arranged opposite the membrane above a cavity. The electrically conductive face element and the carrier layer are perforated by perforation openings. The opening width of the perforation openings corresponds approximately to the thickness of the carrier layer.