Abstract: A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

Abstract: A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

Abstract: One inventive aspect is related to an atomic force microscopy probe. The probe comprises a tip configuration with two probe tips on one cantilever arm. The probe tips are electrically isolated from each other and of approximately the same height with respect to the cantilever arm. The outer surface of the tip configuration has the shape of a body with a base plane and an apex. The body is divided into two sub-parts by a gap located approximately symmetrically with respect to the apex and approximately perpendicular to the base plane. Another inventive aspect related to methods for producing such an AFM probe.

Abstract: One inventive aspect is related to an atomic force microscopy probe. The probe comprises a tip configuration with two probe tips on one cantilever arm. The probe tips are electrically isolated from each other and of approximately the same height with respect to the cantilever arm. The outer surface of the tip configuration has the shape of a body with a base plane and an apex. The body is divided into two sub-parts by a gap located approximately symmetrically with respect to the apex and approximately perpendicular to the base plane. Another inventive aspect related to methods for producing such an AFM probe.

Abstract: One inventive aspect is related to an atomic force microscopy probe. The probe comprises a tip configuration with two probe tips on one cantilever arm. The probe tips are electrically isolated from each other and of approximately the same height with respect to the cantilever arm. The outer surface of the tip configuration has the shape of a body with a base plane and an apex. The body is divided into two sub-parts by a gap located approximately symmetrically with respect to the apex and approximately perpendicular to the base plane. Another inventive aspect related to methods for producing such an AFM probe.

Abstract: An intermediate probe structure for atomic force microscopy is disclosed. The probe structure comprises a semiconductor substrate with one or more moulds formed on a surface of one side of the substrate. The probe structure further comprises one or more probe configurations formed on the one side of the semiconductor substrate, wherein each probe configuration comprises a contact region and at least one set of a probe tip and a cantilever. The probe structure further comprises one or more holders attached to each of the contact regions, wherein the surface area of each contact region is smaller in size than the surface area of the holder which is attached to the contact region.

Abstract: A method for producing probes for atomic force microscopy comprises producing, on a surface of one side of a semiconductor substrate, one or more moulds for the production of one or more probe tips. One or more probe configurations and at least one set of a probe tip and a cantilever are also produced on the side of the substrate, wherein each configuration comprises a contact region for attachment of a holder. The surface area of each contact region is smaller in size than the surface area of the holder. The method further includes attaching one or more holders to the contact region(s), and releasing the probe configuration and the holder from the substrate by under-etching the probe configuration from the side of the substrate on which the probe configuration is produced.

Abstract: One inventive aspect is related to an atomic force microscopy probe. The probe comprises a tip configuration with two probe tips on one cantilever arm. The probe tips are electrically isolated from each other and of approximately the same height with respect to the cantilever arm. The outer surface of the tip configuration has the shape of a body with a base plane and an apex. The body is divided into two sub-parts by a gap located approximately symmetrically with respect to the apex and approximately perpendicular to the base plane. Another inventive aspect related to methods for producing such an AFM probe.

Abstract: A method for producing probes for atomic force microscopy comprises producing, on a surface of one side of a semiconductor substrate, one or more moulds for the production of one or more probe tips. One or more probe configurations and at least one set of a probe tip and a cantilever are also produced on the side of the substrate, wherein each configuration comprises a contact region for attachment of a holder. The surface area of each contact region is smaller in size than the surface area of the holder. The method further includes attaching one or more holders to the contact region(s), and releasing the probe configuration and the holder from the substrate by under-etching the probe configuration from the side of the substrate on which the probe configuration is produced.