Abstract: The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CIGS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices.

Abstract: The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CIGS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices.

Abstract: The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CIGS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices.

Abstract: The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices.

Abstract: The present invention provides strategies for making high quality CIGS photoabsorbing compositions from sputtered precursor film(s). The precursors are converted into CIGS photoabsorbing material via a chalcogenizing treatment (also referred to as “post-chalcogenization,” including, e.g., “post-selenization” when Se is used and/or “post-sulfurization” when S is used) using techniques that allow the post-chalcogenizing treatment to occur under atypically low pressure conditions. Consequently, the strategies of the invention are readily incorporated into batch processes or continuous processes such as roll-to-roll process occurring under vacuum. The present invention is useful at lab, pilot plant, and industrial scales.

Abstract: The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices.

Abstract: Liquid organic material is controllably delivered to a receptacle located in the center of a heated surface capable of horizontally rotating about its central axis. As the heated surface rotates, material deposited within the central receptacle is forced outwardly and across the rotating surface. As the material moves radially, it evaporates into a vapor which is then transported to one or more nozzles. From the nozzles, the vapor is applied to a substrate and condensed. The spinning disk evaporator enables the evaporation of a wider variety of organic liquids greater reliability in continuous operation, a decrease in maintenance, and a larger and more constant material flow rate.

Abstract: Liquid organic material is controllably delivered to a receptacle located in the center of a heated surface capable of horizontally rotating about its central axis. As the heated surface rotates, material deposited within the central receptacle is forced outwardly and across the rotating surface. As the material moves radially, it evaporates into a vapor which is then transported to one or more nozzles. From the nozzles, the vapor is applied to a substrate and condensed. Relative to existing devices and methods, the present invention enables the evaporation of a wider variety of organic liquids, greater reliability in continuous operation, a decrease in maintenance, and a larger and more constant material flow rate.

Abstract: Liquid organic material is controllably delivered to a receptacle located in the center of a heated surface capable of horizontally rotating about its central axis. As the heated surface rotates, material deposited within the central receptacle is forced outwardly and across the rotating surface. As the material moves radially, it evaporates into a vapor which is then transported to one or more nozzles. From the nozzles, the vapor is applied to a substrate and condensed. Relative to existing devices and methods, the present invention enables the evaporation of a wider variety of organic liquids, greater reliability in continuous operation, a decrease in maintenance, and a larger and more constant material flow rate.

Abstract: Liquid organic material is controllably delivered to a receptacle located in the center of a heated surface capable of horizontally rotating about its central axis. As the heated surface rotates, material deposited within the central receptacle is forced outwardly and across the rotating surface. As the material moves radially, it evaporates into a vapor which is then transported to one or more nozzles. From the nozzles, the vapor is applied to a substrate and condensed. Relative to existing devices and methods, the present invention enables the evaporation of a wider variety of organic liquids, greater reliability in continuous operation, a decrease in maintenance, and a larger and more constant material flow rate.