Abstract: An infrared imaging microbolometer integrating a membrane assembled in suspension above a substrate by means of holding arms attached to anchoring nails is disclosed. The membrane includes a support layer crossing the upper end of the anchoring nails. It also includes an absorber or electrode deposited on the support layer and on the anchoring nails with a pattern forming at least two electrodes. It further includes a dielectric layer deposited on the absorber or electrode and on the support layer, at least two conductive vias formed through the dielectric layer in contact with the at least two electrodes, and a thermometric or thermoresistive material arranged on a planar surface formed at the level of the upper ends of the conductive vias.

Abstract: A process for producing a microbolometer including a vanadium-oxide-based sensitive material containing an additional chemical element chosen from arsenic, germanium, silicon and phosphorus, the process including: determining an effective amount of the additional chemical element from which the modified compound, having undergone a step of exposure to a temperature Tr for a time ?tr, exhibits an electrical resistivity ?a|r at room temperature that is higher than 10% of its native value; producing the sensitive material in a thin layer, this material being formed from the modified compound having an amount of the additional chemical element that is greater than or equal to the effective amount; and exposing the sensitive material to the temperature Tr for the time ?tr.

Abstract: An infrared radiation detector includes an array of elementary imaging bolometric detectors, each of the elementary bolometric detectors being formed of a bolometric membrane including a film made of vanadium oxide VOx, having a resistivity in the range from 6 ohm·cm to 50 ohm·cm, said membrane being suspended above a substrate integrating a signal for reading out the signal generated by said elementary detectors and for sequentially addressing the elementary detectors.

Abstract: An infrared radiation detector includes an array of elementary imaging bolometric detectors, each of the elementary bolometric detectors being formed of a bolometric membrane including a film made of vanadium oxide VOx, having a resistivity in the range from 6 ohm·cm to 50 ohm·cm, said membrane being suspended above a substrate integrating a signal for reading out the signal generated by said elementary detectors and for sequentially addressing the elementary detectors.

Abstract: The invention relates to a method for producing a spinel iron oxide layer. textured according to a preferred crystal orientation along the [111] direction, with the spinel iron oxide layer being a ferrite layer or a doped ferrite layer, characterised in that it comprises: producing a bottom layer of titanium (Ti) or titanium oxide (TiOx), with the thickness of the bottom layer being greater than or equal to eight nanometres; producing a spinel iron oxide layer on the bottom layer produced beforehand. It also relates to a device comprising a layer of textured ferrite.