Patents by Inventor Marc H. Labranche
Marc H. Labranche has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9431148Abstract: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. Optionally the glass is (by weight) 25-45% SiO2, 2-15% Al2O3, 0-3% ZrO2, 0-8% B2O3, 5-15% CuO, 0-8% BaO, 0-3% P2O5, and 20-50% Bi2O3. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.Type: GrantFiled: December 30, 2013Date of Patent: August 30, 2016Assignee: EI DU PONT DE NEMOURS AND COMPANYInventors: Marc H Labranche, Kenneth Warren Hang
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Publication number: 20150203694Abstract: The present invention is directed to a highly conductive, low sintering temperature platinum powder produced using an aerosol decomposition process with platinum (II) tetraamine diacetate as the precursorType: ApplicationFiled: January 16, 2015Publication date: July 23, 2015Applicant: E I DU PONT DE NEMOURS AND COMPANYInventors: HOWARD DAVID GLICKSMAN, MARC H LABRANCHE, PATRICIA O. MARKHAM, ADELE AMELIA PLISCOTT
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Publication number: 20140110637Abstract: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. Optionally the glass is (by weight) 25-45% SiO2, 2-15% Al2O3, 0-3% ZrO2, 0-8% B2O3, 5-15% CuO, 0-8% BaO, 0-3% P2O5, and 20-50% Bi2O3. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.Type: ApplicationFiled: December 30, 2013Publication date: April 24, 2014Applicant: E I DU PONT DE NEMOURS AND COMPANYInventors: MARC H LABRANCHE, KENNETH WARREN HANG
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Patent number: 8628695Abstract: The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.Type: GrantFiled: April 16, 2009Date of Patent: January 14, 2014Assignee: E I du Pont de Nemours and CompanyInventors: Kenneth Warren Hang, Marc H. Labranche, Barry Edward Taylor, Paul Douglas Vernooy
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Patent number: 8617428Abstract: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.Type: GrantFiled: November 9, 2011Date of Patent: December 31, 2013Assignee: E I du Pont de Nemours and CompanyInventors: Marc H. LaBranche, Kenneth Warren Hang
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Patent number: 8257619Abstract: A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO2 conductive material; (b) an ?-oxide selected from CuO, Na2O, K2O, Li2O and combinations thereof (c) a borosilicate glass composition having: (i) B2O3, (ii) SiO2, (iii) a ?-oxide selected from BaO, CaO, ZnO, SrO, MgO and combinations thereof, and optionally including any of (iv) P2O5, (v) ZrO2 and (vi) Al2O3. The CuO ?-oxide and TiO2, Ta2O5, Nb2O5 ?-oxide(s) and combinations thereof are present in the paste composition either separately, or in the borosilicate glass composition, or both. The Na2O, K2O, Li2O ?-oxide(s) and combinations thereof are present in the borosilicate glass composition. TCR values in the range of +/?100 ppm/° C. and R values of 100 ohms to 10 mega-ohms per square are obtained by resistors made from the paste composition.Type: GrantFiled: April 16, 2009Date of Patent: September 4, 2012Assignee: E I du Pont de Nemours and CompanyInventors: Marc H. Labranche, Kenneth Warren Hang, Alfred T. Walker, Constance Wenger, legal representative, Yuko Ogata
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Publication number: 20120164314Abstract: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.Type: ApplicationFiled: November 9, 2011Publication date: June 28, 2012Applicant: E.I. DU PONT DE NEMOURS AND COMPANYInventors: Marc H. LaBranche, Kenneth Warren Hang
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Patent number: 8133413Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.Type: GrantFiled: April 17, 2009Date of Patent: March 13, 2012Assignee: E. I. du Pont de Nemours and CompanyInventors: Keiichiro Hayakawa, Jerome David Smith, Yuko Ogata, Marc H. Labranche, Kenneth Warren Hang
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Publication number: 20110089381Abstract: A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO2 conductive material; (b) an ?-oxide selected from CuO, Na2O, K2O, Li2O and combinations thereof (c) a borosilicate glass composition having: (i) B2O3, (ii) SiO2, (iii) a ?-oxide selected from BaO, CaO, ZnO, SrO, MgO and combinations thereof, and optionally including any of (iv) P2O5, (v) ZrO2 and (vi) Al2O3. The CuO ?-oxide and TiO2, Ta2O5, Nb2O5 ?-oxide(s) and combinations thereof are present in the paste composition either separately, or in the borosilicate glass composition, or both. The Na2O, K2O, Li2O ?-oxide(s) and combinations thereof are present in the borosilicate glass composition. TCR values in the range of +/?100 ppm/° C. and R values of 100 ohms to 10 mega-ohms per square are obtained by resistors made from the paste composition.Type: ApplicationFiled: April 16, 2009Publication date: April 21, 2011Applicant: E. I. DU PONT DE NEMOURS AND COMPANYInventors: Marc H. Labranche, Kenneth Warren Hang, Alfred T. Walker, Constance Wenger, Yuko Ogata
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Publication number: 20090261941Abstract: The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.Type: ApplicationFiled: April 16, 2009Publication date: October 22, 2009Applicant: E. I. DU PONT DE NEMOURS AND COMPANYInventors: Kenneth Warren Hang, Marc H. Labranche, Barry Edward Taylor, Paul Douglas Vernooy
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Publication number: 20090261307Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.Type: ApplicationFiled: April 17, 2009Publication date: October 22, 2009Applicant: E.I. DU PONT DE NEMOURS AND COMPANYInventors: Keiichiro Hayakawa, Jerome David Smith, Yuko Ogata, Marc H. Labranche, Kenneth Warren Hang
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Patent number: 5518663Abstract: The invention is directed to a thick film conductor composition wherein such compositions have improved solderability and adhesion to substrates due to the addition of a crystalline material from the feldspar family.Type: GrantFiled: December 6, 1994Date of Patent: May 21, 1996Assignee: E. I. Du Pont de Nemours and CompanyInventors: Marc H. LaBranche, Bradley J. Schickling, Barry E. Taylor
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Patent number: 5162062Abstract: A method for making multilayer electronic circuits comprising the sequential steps of(1) applying to a substrate comprising a plurality of alternating dielectric and conductive layers a thick film dielectric paste containing a low-melting silicate glass;(2) applying to the dielectric paste layer a pattern of thick film conductor paste comprising finely divided particles of silver, an inorganic binder and a ruthenium- or rhodium-based sintering inhibitor, all dispersed in an organic medium; and(3) air cofiring the applied layers of thick film dielectric and conductive pastes.Type: GrantFiled: June 17, 1991Date of Patent: November 10, 1992Assignee: E. I. Du Pont de Nemours and CompanyInventors: Alan F. Carroll, Marc H. Labranche