Patents by Inventor Marc Klosner

Marc Klosner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8942265
    Abstract: In one embodiment, the instant invention provides a method that includes: outputting a first laser beam having: a beam quality factor (M2) between 1 and 5, and a spectral width of less than 0.15 nm, where the outputting is performed by a laser generating component that includes a alexandrite laser oscillator; converting the first laser beam through a first Raman cell to produce a second laser beam, where the first Raman cell is filled with a first gas; and converting the second laser beam through a second Raman cell to produce a final laser beam, where the second Raman cell is filled with a second gas and is operationally positioned after the first Raman cell, where the first gas and the second gas are different gasses, and where the final laser beam having: a second energy of at least 1 mJ, and at least one wavelength longer than 2.5 micron.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: January 27, 2015
    Assignee: Light Age, Inc.
    Inventors: Donald F. Heller, Marc Klosner, Brian A. Pryor, Thangavel Thevar, Bruce Boczar
  • Publication number: 20140376573
    Abstract: In one embodiment, the instant invention provides a method that includes: outputting a first laser beam having: a beam quality factor (M2) between 1 and 5, and a spectral width of less than 0.15 nm, where the outputting is performed by a laser generating component that includes a alexandrite laser oscillator; converting the first laser beam through a first Raman cell to produce a second laser beam, where the first Raman cell is filled with a first gas; and converting the second laser beam through a second Raman cell to produce a final laser beam, where the second Raman cell is filled with a second gas and is operationally positioned after the first Raman cell, where the first gas and the second gas are different gasses, and where the final laser beam having: a second energy of at least 1 mJ, and at least one wavelength longer than 2.5 micron.
    Type: Application
    Filed: July 22, 2013
    Publication date: December 25, 2014
    Applicant: Light Age, Inc.
    Inventors: Donald F. Heller, Marc Klosner, Brian A. Pryor, Thangavel Thevar, Bruce Boczar
  • Patent number: 8494012
    Abstract: In one embodiment, the instant invention provides a method that includes: outputting a first laser beam having: a beam quality factor (M2) between 1 and 5, and a spectral width of less than 0.15 nm, where the outputting is performed by a laser generating component that includes a alexandrite laser oscillator; converting the first laser beam through a first Raman cell to produce a second laser beam, where the first Raman cell is filled with a first gas; and converting the second laser beam through a second Raman cell to produce a final laser beam, where the second Raman cell is filled with a second gas and is operationally positioned after the first Raman cell, where the first gas and the second gas are different gasses, and where the final laser beam having: a second energy of at least 1 mJ, and at least one wavelength longer than 2.5 micron.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: July 23, 2013
    Assignee: Light Age, Inc.
    Inventors: Donald F. Heller, Marc Klosner, Brian A. Pryor, Thangavel Thevar, Bruce Boczar
  • Publication number: 20120314722
    Abstract: In one embodiment, the instant invention provides a method that includes: outputting a first laser beam having: a beam quality factor (M2) between 1 and 5, and a spectral width of less than 0.15 nm, where the outputting is performed by a laser generating component that includes a alexandrite laser oscillator; converting the first laser beam through a first Raman cell to produce a second laser beam, where the first Raman cell is filled with a first gas; and converting the second laser beam through a second Raman cell to produce a final laser beam, where the second Raman cell is filled with a second gas and is operationally positioned after the first Raman cell, where the first gas and the second gas are different gasses, and where the final laser beam having: a second energy of at least 1 mJ, and at least one wavelength longer than 2.5 micron.
    Type: Application
    Filed: April 5, 2012
    Publication date: December 13, 2012
    Inventors: Don F. Heller, Marc Klosner, Brian A. Pryor, Thangavel Thevar, Bruce Boczar
  • Patent number: 7670727
    Abstract: A zero power identical pair of oppositely-oriented meniscus lens elements mounted in the projection light path, serves as curved mask support while compensating for optical anomalies such as beam shift and beam deviations produced by other transparent supports for the curved mask. The zero-power meniscus lens pair, without affecting the transmission beam characteristics, lets the beam diffract as efficiently as does a regular planar mask, thus preserving the partial coherence effects and resolution concepts of projection lithography. This simple but novel optics device is not only expected to clear several barriers for curved mask projection lithography but also find place in other applications where collimated or converging light beams have to travel extra paths without significant aberration.
    Type: Grant
    Filed: August 30, 2006
    Date of Patent: March 2, 2010
    Assignee: Anvik Corporation
    Inventors: Sivarama K. Kuchibhotla, Kanti Jain, Marc A. Klosner
  • Publication number: 20070139791
    Abstract: An optimized illumination system that efficiently produces uniform illumination for exposure, photoablation, and laser crystallization systems. The illumination system includes a homogenizer that uniformizes and shapes a light beam, which is directed onto a mask by condenser optics. The illumination system recycles radiation by directing light reflected by the mask back into the illumination system, where an apertured mirror situated at the input end re-directs it back toward the mask. The relative mirror and aperture sizes affect recycling efficiency and system throughput, so the system features a wide recycling segment enabling greater mirror-to-aperture area ratios. An added segment at the output end of the homogenizer matches the homogenizer diameter to the projection imaging system object field size. This standardizes the homogenizer and condenser lens construction system, reducing the need for customized parts and thus reducing manufacturing time and expense.
    Type: Application
    Filed: December 18, 2006
    Publication date: June 21, 2007
    Applicant: Anvik Corporation
    Inventors: Shyam Raghunandan, Kanti Jain, Marc Zemel, Marc Klosner, Sivarama Kuchibhotla
  • Publication number: 20070024830
    Abstract: A zero power identical pair of oppositely-oriented meniscus lens elements mounted in the projection light path, serves as curved mask support while compensating for optical anomalies such as beam shift and beam deviations produced by other transparent supports for the curved mask. The zero-power meniscus lens pair, without affecting the transmission beam characteristics, lets the beam diffract as efficiently as does a regular planar mask, thus preserving the partial coherence effects and resolution concepts of projection lithography. This simple but novel optics device is not only expected to clear several barriers for curved mask projection lithography but also find place in other applications where collimated or converging light beams have to travel extra paths without significant aberration.
    Type: Application
    Filed: August 30, 2006
    Publication date: February 1, 2007
    Inventors: Sivarama Kuchibhotla, Kanti Jain, Marc Klosner
  • Patent number: 7164465
    Abstract: A versatile maskless patterning system with capability for selecting rapidly among a plurality of projection lenses mounted on a turret. This provides the ability to rapidly select multiple choices for resolution and enables optimization of the combination of the imaging resolution and exposure throughput, making possible cost-effective fabrication of microelectronics packaging products. A preferred embodiment uses a digital micromirror device array spatial light modulator as a virtual mask. Another preferred embodiment use multiple closely spaced digital micromirror device array spatial light modulators to enhance throughput.
    Type: Grant
    Filed: July 13, 2004
    Date of Patent: January 16, 2007
    Assignee: Anvik Corporation
    Inventors: Marc A. Klosner, Kanti Jain
  • Patent number: 7158305
    Abstract: An optimized illumination system that efficiently produces uniform illumination for exposure, photoablation, and laser crystallization systems. The illumination system includes a homogenizer that uniformizes and shapes a light beam, which is directed onto a mask by condenser optics. The illumination system recycles radiation by directing light reflected by the mask back into the illumination system, where an apertured mirror situated at the input end re-directs it back toward the mask. The relative areas of the mirror and aperture affect recycling efficiency and system throughput, so the system features a larger-diameter recycling segment enabling greater mirror-to-aperture area ratios. An added segment at the output end of the homogenizer matches the homogenizer diameter to the projection imaging system object field size. This standardizes the homogenizer and condenser lens integration, reducing the need for customized parts and thus reducing manufacturing time and expense.
    Type: Grant
    Filed: June 29, 2004
    Date of Patent: January 2, 2007
    Assignee: Anvik Corporation
    Inventors: Shyam Raghunandan, Kanti Jain, Marc I. Zemel, Marc A. Klosner, Sivarama K. Kuchibhotla
  • Patent number: 7106415
    Abstract: A zero power identical pair of oppositely-oriented meniscus lens elements mounted in the projection light path, serves as curved mask support while compensating for optical anomalies such as beam shift and beam deviations produced by other transparent supports for the curved mask. The zero-power meniscus lens pair, without affecting the transmission beam characteristics, lets the beam diffract as efficiently as does a regular planar mask, thus preserving the partial coherence effects and resolution concepts of projection lithography. This simple but novel optics device is not only expected to clear several barriers for curved mask projection lithography but also find place in other applications where collimated or converging light beams have to travel extra paths without significant aberration.
    Type: Grant
    Filed: December 9, 2003
    Date of Patent: September 12, 2006
    Assignee: Anvik Corporation
    Inventors: Sivarama K. Kuchibhotla, Kanti Jain, Marc A. Klosner
  • Publication number: 20060012766
    Abstract: A versatile maskless patterning system with capability for selecting rapidly among a plurality of projection lenses mounted on a turret. This provides the ability to rapidly select multiple choices for resolution and enables optimization of the combination of the imaging resolution and exposure throughput, making possible cost-effective fabrication of microelectronics packaging products. A preferred embodiment uses a digital micromirror device array spatial light modulator as a virtual mask. Another preferred embodiment use multiple closely spaced digital micromirror device array spatial light modulators to enhance throughput.
    Type: Application
    Filed: July 13, 2004
    Publication date: January 19, 2006
    Inventors: Marc Klosner, Kanti Jain
  • Publication number: 20060001845
    Abstract: An optimized illumination system that efficiently produces uniform illumination for exposure, photoablation, and laser crystallization systems. The illumination system includes a homogenizer that uniformizes and shapes a light beam, which is directed onto a mask by condenser optics. The illumination system recycles radiation by directing light reflected by the mask back into the illumination system, where an apertured mirror situated at the input end re-directs it back toward the mask. The relative areas of the mirror and aperture affect recycling efficiency and system throughput, so the system features a larger-diameter recycling segment enabling greater mirror-to-aperture area ratios. An added segment at the output end of the homogenizer matches the homogenizer diameter to the projection imaging system object field size. This standardizes the homogenizer and condenser lens integration, reducing the need for customized parts and thus reducing manufacturing time and expense.
    Type: Application
    Filed: June 29, 2004
    Publication date: January 5, 2006
    Applicant: Anvik Corporation
    Inventors: Shyam Raghunandan, Kanti Jain, Marc Zemel, Marc Klosner, Sivarama Kuchibhotla
  • Publication number: 20050122494
    Abstract: A Zerogon, a zero power identical pair of oppositely-oriented meniscus lens elements mounted in the illumination light path, serves as curved mask support while compensating for optical anomalies such as beam shift and beam deviations produced by other transparent supports for the curved mask. The Zerogon, without affecting the transmission beam characteristics, lets the beam diffract as efficiently as does a regular planar mask, thus preserving the partial coherence parameters and resolution capabilities of projection lithography. This novel optical device is not only expected to clear several barriers for curved mask projection lithography but also find place in other applications where collimated or converging light beams have to travel extra paths without significant aberration in any generic optical system.
    Type: Application
    Filed: December 9, 2003
    Publication date: June 9, 2005
    Inventors: Sivarama Kuchibhotla, Kanti Jain, Marc Klosner
  • Patent number: 6621044
    Abstract: Apparatus and method for patterned sequential lateral solidification of a substrate surface, avoiding the need for demagnification to avoid mask damage from fluence sufficient to overcome the threshold for sequential lateral solidification, while using the high throughput of a common stage presenting both 1:1 mask and substrate simultaneously for patterning. The radiation source provides imaging beam and non-imaging beam, each of fluence below the threshold of sequential lateral solidification, but with aggregate fluence above the threshold. The imaging beam path includes a relatively delicate 1:1 mask and 1:1 projection subsystem, with optical elements including a final fold mirror proximate to the substrate surface, put the below-threshold mask pattern on the substrate surface. The non-imaging beam bypasses the delicate elements of imaging beam path, passing through or around the final fold mirror, to impinge on the substrate surface at the same location.
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: September 16, 2003
    Assignee: Anvik Corporation
    Inventors: Kanti Jain, Robert S. Sposili, Marc A. Klosner, Marc I. Zemel
  • Publication number: 20020130279
    Abstract: Apparatus and method for patterned sequential lateral solidification of a substrate surface, avoiding the need for demagnification to avoid mask damage from fluence sufficient to overcome the threshold for sequential lateral solidification, while using the high throughput of a common stage presenting both 1:1 mask and substrate simultaneously for patterning. The radiation source provides imaging beam and non-imaging beam, each of fluence below the threshold of sequential lateral solidification, but with aggregate fluence above the threshold. The imaging beam path includes a relatively delicate 1:1 mask and 1:1 projection subsystem, with optical elements including a final fold mirror proximate to the substrate surface, put the below-threshold mask pattern on the substrate surface. The non-imaging beam bypasses the delicate elements of imaging beam path, passing through or around the final fold mirror, to impinge on the substrate surface at the same location.
    Type: Application
    Filed: January 18, 2001
    Publication date: September 19, 2002
    Inventors: Kanti Jain, Robert S. Sposili, Marc A. Klosner, Marc I. Zemel
  • Patent number: 6416908
    Abstract: A microlithography system, capable of performing high resolution imaging on large-area curved surfaces, based on projection lithography. The system utilizes a high-resolution lens to image a curved mask directly onto a curved substrate. The system uses a curved mask which is identical in shape to the curved substrate, in order to achieve a constant track length for conjugate object and image points, thereby maintaining focus over the full area of curved substrates having height variations that greatly exceed the depth-of-focus of the imaging lens. Magnification errors are controlled by continuous adjustments of the z-position of the projection lens during scanning, with the adjustments depending upon the topography of the curved mask and substrate. By performing the lithography using a step-and-scan seamless-patterning microlithography system, it is possible to pattern over large areas, greater than the field size of the lens.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: July 9, 2002
    Assignee: Anvik Corporation
    Inventors: Marc A. Klosner, Marc I. Zemel, Kanti Jain, Nestor O. Farmiga
  • Patent number: 6238852
    Abstract: A maskless lithography system that provides large-area, seamless patterning using a reflective spatial light modulator such as a Deformable Micromirror Device (DMD) directly addressed by a control system so as to provide a first pattern, via a first projection subsystem, on a first photoresist-coated substrate panel, while simultaneously providing a duplicate pattern, which is a negative of the pattern on the first substrate panel, via a second projection subsystem, onto a second photosensitive substrate panel, thus using the normally-rejected non-pattern “off” pixel radiation reflected by the “off” pixel micromirrors of the DMD, to pattern a second substrate panel. Since the “off” pixel reflections create a pattern which is complementary to the “on” pixel pattern, using a complementary photoresist coating on the second substrate panel provides for a duplicate pattern, as is usually desired.
    Type: Grant
    Filed: January 4, 1999
    Date of Patent: May 29, 2001
    Assignee: Anvik Corporation
    Inventor: Marc A. Klosner
  • Patent number: 6188076
    Abstract: Capillary discharge extreme ultraviolet lamp sources for EUV microlithography and other applications. The invention covers operating conditions for a pulsed capillary discharge lamp for EUVL and other applications such as resist exposure tools, microscopy, interferometry, metrology, biology and pathology. Techniques and processes are described to mitigate against capillary bore erosion, pressure pulse generation, and debris formation in capillary discharge-powered lamps operating in the EUV. Additional materials are described for constructing capillary discharge devices fore EUVL and related applications. Further, lamp designs and configurations are described for lamps using gasses and metal vapors as the radiating species.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: February 13, 2001
    Assignee: University of Central Florida
    Inventors: William T. Silfvast, Marc A. Klosner
  • Patent number: 5963616
    Abstract: This invention relates to Lithium Plasma discharge sources, and in particular to methods of making and producing pulsed and continuous discharge sources for plasma soft-x-ray or EUV projection lithography. Specifically, novel configurations, metal and ceramic material combinations and efficient wavelengths over and including 11.4 nm are disclosed for EUV lithium plasma discharge lamps.
    Type: Grant
    Filed: March 11, 1997
    Date of Patent: October 5, 1999
    Assignee: University of Central Florida
    Inventors: William T. Silfvast, Marc A. Klosner