Patents by Inventor Marc Knox

Marc Knox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11561243
    Abstract: A wafer test device and methods of assembling a wafer test device involve a first laminate structure, and a second laminate structure arranged to interface with a microcircuit of the wafer. The wafer test device includes a compliant layer between the first laminate structure and the second laminate structure. The compliant layer includes an elastomer that exhibits compliance within a limited range of movement.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: January 24, 2023
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David Audette, Grant Wagner, Marc Knox, Dennis Conti
  • Patent number: 11322473
    Abstract: Aspects of the invention include a method of tuning an interconnect that couples a first structure that is a first integrated circuit or a first laminate structure to a second structure that is a second integrated circuit or a second laminate structure. The method includes obtaining a compression requirement for a spring in a compliant layer of the interconnect. A longer path length of the spring leads to greater compression and mechanical support. Current and signal speed requirements for the interconnect are obtained. A shorter path length of the spring leads to greater current-carrying capacity and greater signal speed. Specifications for the spring are determined based on the compression requirement and the current and signal speed requirements. Determining the specifications includes determining a number of active coils of the spring to be less than two.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: May 3, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David Audette, Grant Wagner, Marc Knox, Dennis Conti
  • Publication number: 20210080486
    Abstract: A wafer test device and methods of assembling a wafer test device involve a first laminate structure, and a second laminate structure arranged to interface with a microcircuit of the wafer. The wafer test device includes a compliant layer between the first laminate structure and the second laminate structure. The compliant layer includes an elastomer that exhibits compliance within a limited range of movement.
    Type: Application
    Filed: September 12, 2019
    Publication date: March 18, 2021
    Inventors: David Audette, Grant Wagner, Marc Knox, Dennis Conti
  • Publication number: 20210082860
    Abstract: Aspects of the invention include a method of tuning an interconnect that couples a first structure that is a first integrated circuit or a first laminate structure to a second structure that is a second integrated circuit or a second laminate structure. The method includes obtaining a compression requirement for a spring in a compliant layer of the interconnect. A longer path length of the spring leads to greater compression and mechanical support. Current and signal speed requirements for the interconnect are obtained. A shorter path length of the spring leads to greater current-carrying capacity and greater signal speed. Specifications for the spring are determined based on the compression requirement and the current and signal speed requirements. Determining the specifications includes determining a number of active coils of the spring to be less than two.
    Type: Application
    Filed: September 12, 2019
    Publication date: March 18, 2021
    Inventors: David Audette, Grant Wagner, Marc Knox, Dennis Conti
  • Publication number: 20080036486
    Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.
    Type: Application
    Filed: October 22, 2007
    Publication date: February 14, 2008
    Inventors: Anne Gattiker, David Grosch, Marc Knox, Franco Motika, Phil Nigh, Jody Van Horn, Paul Zuchowski
  • Publication number: 20070285116
    Abstract: A method, system and apparatus for testing an integrated circuit chip. The system including: means for forming a liquid polyalphaolefine layer on a bottom surface of the integrated circuit chip, a top surface of the integrated circuit chip having and a bottom surface not having signal and power pads; means for placing a surface of a heat sink into physical contact with the bottom surface of the polyalphaolefine layer; means for electrically coupling the integrated circuit chip to a tester; means for electrically testing the integrated circuit chip; means for electrically de-coupling the integrated circuit chip from the tester; means for removing the heat sink from contact with the polyalphaolefine layer, all or a portion of the polyalphaolefine layer remaining on the bottom surface of the integrated circuit chip; and means for removing the polyalphaolefine layer from the bottom surface of the integrated circuit chip.
    Type: Application
    Filed: May 3, 2007
    Publication date: December 13, 2007
    Inventors: Paul Aube, Normand Cote, Roger Gamache, David Gardell, Paul Gaschke, Marc Knox, Denis Turcotte
  • Publication number: 20060186909
    Abstract: A method, system and apparatus for testing an electronic device. The method including: (a) forming a temporary liquid heat transfer layer on a surface of the electronic device; after step (a), (b) placing a surface of a heat sink into physical contact with a surface of the heat transfer layer; after step (b), (c) electrically testing the electronic device; after step (c), (d) removing the heat sink from contact with the heat transfer layer; and after step (d), (e) removing any heat transfer layer remaining on the electronic device from the surface of the electronic device.
    Type: Application
    Filed: February 22, 2005
    Publication date: August 24, 2006
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Paul Aube, Normand Cote, Roger Gamache, David Gardell, Paul Gaschke, Marc Knox, Denis Turcotte
  • Publication number: 20060071653
    Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.
    Type: Application
    Filed: February 20, 2003
    Publication date: April 6, 2006
    Inventors: Anne Gattiker, David Grosch, Marc Knox, Franco Motika, Phil Nigh, Jody Van Horn, Paul Zuchowski
  • Publication number: 20050068053
    Abstract: According to the present invention, a method of controlling the burning in of at least one I/C device in a burn in tool is provided. For high power device, the tool has a heat sink positioned to contact each device being burned in, and has a socket for mounting each device to be burned in, and a power source to supply electrical current to burn in each device. The method includes the steps of continuously monitoring at least one process parameter selected from the group of current, voltage, power and temperature, and varying the voltage to maintain at least one of the parameters at or below a given value. Also, a technique for burning in low power devices without a heat sink is provided. The invention also contemplates a tool for performing the above method.
    Type: Application
    Filed: September 30, 2003
    Publication date: March 31, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Dennis Conti, Roger Gamache, David Gardell, Marc Knox, Jody Van Horn