Abstract: A technique for heating a substrate support, such as a susceptor, includes establishing respective final temperature setpoints for first and second heating elements in the susceptor. The temperatures of the heating elements are raised to their respective final temperature setpoints based on a predetermined heating rate. The temperatures of the first and second heating elements are controlled so that the difference between the temperatures of the first and second heating elements does not exceed the predetermined value while the temperatures of the heating elements are raised to their respective final temperature setpoints. Controlling the temperatures includes setting interim setpoints for the first and second heating elements, where the interim setpoint for the heating element having the greater heating capacity depends on the current value of the interim setpoint of the other heating element and the predetermined value.

Abstract: High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.

Abstract: A method of limiting sticking of a body (substrate) to a susceptor after the body has been coated with a layer in a deposition chamber by plasma chemical vapor deposition includes subjecting the coated body to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body. After the coated body is subjected to the plasma of the inactive gas, the body is separated from the susceptor.