Abstract: A measuring system is disclosed that may include a sensing module that provides a response to a measured quantity, a first mechanical transducer that provides an output signal proportional to the measured quantity, a conversion device that converts the output signal to a second output signal, and a sensor that detects the second output signal and generates an instrument reading within an instrument range of output signals. A bias assembly may forces a second mechanical transducer to provide the second output signal that is detected by the sensor and which generates an instrument reading outside of the specified instrument range when the mechanical transducer is disconnected from the conversion device. A level detector is also disclosed that may include a displacer assembly, a torque rod coupled to the displacer assembly and connected to a magnet, and a non-contact sensor that detects displacement of the magnet assembly within an instrument range.

Abstract: A measuring system is disclosed that may include a sensing module that provides a response to a measured quantity, a first mechanical transducer that provides an output signal proportional to the measured quantity, a conversion device that converts the output signal to a second output signal, and a sensor that detects the second output signal and generates an instrument reading within an instrument range of output signals. A bias assembly may forces a second mechanical transducer to provide the second output signal that is detected by the sensor and which generates an instrument reading outside of the specified instrument range when the mechanical transducer is disconnected from the conversion device. A level detector is also disclosed that may include a displacer assembly, a torque rod coupled to the displacer assembly and connected to a magnet, and a non-contact sensor that detects displacement of the magnet assembly within an instrument range.

Abstract: The crucible is of the type in which substrates to be epitaxially coated are disposed in a slide comprising a substrate carrier (7), whose displacement permits of bringing the substrates (9) successively into contact with different baths of epitaxy. It comprises a compartment (2), in which tightening slides (11) and solution-containing slides (12) are alternately stacked, each of the latter slides having a cavity receiving a solution (14) and merging at the lower part of the said slide (12). The tightening slides (11) close the lower part of the cavities (45). The slide comprising a substrate carrier (7) can be translated between a rear position in which it is disengaged from the stack and a front position in which, after having driven out the lower slide of the stack, it is situated under this stack.

Abstract: The invention relates to a matrix of light-emitting diodes and a method of manufacturing same. A matrix comprises highly doped contact lines of a first conductivity type, localization zones of the second conductivity type opposite to the first type extending transversely with respect to the semi-insulating zones arranged along lines and/or columns and separating along diodes an active layer in contact with the contact lines and a superficial injection layer. The contacts connect the diodes columnwise, regions being internally limited along lines by the area straight above the upper parts of the localization zones, and along columns by the semi-insulating regions. Thus, the contacts are entirely situated outside the light emitting zones defined by the localization zones. The method of manufacturing utilizes steps of localized etching and epitaxy.

Abstract: A semiconductor device includes an electroluminescent diode, which is obtained from at least one epitaxial layer of a III-V compound vapor-deposited on a substrate which is also of a III-V compound. The invention is characterized in that, preferably before the epitaxial layer is vapor deposited, a layer having a disturbed crystal structure is provided at the surface of the substrate, as a result of which the substrate does not generate radiation.

Abstract: A boat for the epitaxial growth of several layers on a substrate includes reservoirs present over a slide in the boat, as well as substrates on a base plate in the boat. A fixedly arranged plate is placed between the base plate and the slide, which fixedly arranged plate and slide include communication windows for liquid solutions in the reservoirs to act on the substrates. Applications of this invention are epitaxial growth of several layers in general, and in particular, the manufacture of plates for opto-electronic semiconnector devices.

Abstract: A boat for use in the epitaxial crystal growth of two layers on multiple substrates includes a structure where the substrates are located in a cavity in a support layer of the crucible structure, and a slide layer having two reservoirs is provided thereover. The two reservoirs contain the respective liquid solution for the two epitaxial layers to be provided, and the two reservoirs are respectively provided with the slide layer being the bottom layer of one reservoir and a removable sealing element being the bottom layer of the other reservoir. Upon moving the slide layer over the bottom supporting layer, the multiple substrates in the cavity are provided with liquid solutions to obtain epitaxial growth.

Abstract: A method of manufacturing by liquid epitaxy III-V semiconductor crystals comprising a layer having isoelectronic nitrogen trapping centers.The method is characterized in that the deposition of the nitrogen-doped layer is succeeded by the deposition of a deep layer containing less nitrogen doping after which a p-n junction is formed in the first layer.