Abstract: This power switching device comprises semiconductor members (60) having drain, gate and source connections. Said members (60) are soldered by their drain soles to protuberances of an electrically conductive cooling plate (20), while the gates and the sources (62, 63) of the semiconductor members (60) are connected to a control circuit and to power connectors via a routing circuit (40) placed generally parallel to and in the vicinity of said plate (20) but separated therefrom by a spacer (30) and having openings (42) corresponding to the flat protuberances of the subjacent plate (20), which protuberances lie in a plane close to the routing circuit (40), by means of which the semiconductor devices (60) may be connected to the plate (20) and to the routing circuit (40) substantially in the same plane.

Abstract: This power switching device comprises semiconductor members (60) having drain, gate and source connections. Said members (60) are soldered by their drain soles to protuberances of an electrically conductive cooling plate (20), while the gates and the sources (62, 63) of the semiconductor members (60) are connected to a control circuit and to power connectors via a routing circuit (40) placed generally parallel to and in the vicinity of said plate (20) but separated therefrom by a spacer (30) and having openings (42) corresponding to the flat protuberances of the subjacent plate (20), which protuberances lie in a plane close to the routing circuit (40), by means of which the semiconductor devices (60) may be connected to the plate (20) and to the routing circuit (40) substantially in the same plane.