Patents by Inventor Marc Nicolet

Marc Nicolet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrically conducting ternary amorphous fully oxidized materials and their application
    Publication number: 20040197983
    Abstract: Electrically active devices are formed using a special conducting material of the form Tm-Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.
    Type: Application
    Filed: April 20, 2004
    Publication date: October 7, 2004
    Applicant: California Institute of Technology, a corporation
    Inventors: Pierre Giauque, Marc Nicolet, Stefan M. Gasser, Elzbieta A. Kolawa, Hilary Cherry
  • Electrically conducting ternary amorphous fully oxidized materials and their application
    Patent number: 6723436
    Abstract: Electrically active devices are formed using a special conducting material of the form Tm—Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.
    Type: Grant
    Filed: March 22, 2000
    Date of Patent: April 20, 2004
    Assignee: California Institute of Technology
    Inventors: Pierre Giauque, Marc Nicolet, Stefan M. Gasser, Elzbieta A. Kolawa, Hillary Cherry
  • Conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
    Patent number: 5729054
    Abstract: A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: March 17, 1998
    Assignee: Texas Instruments Incorporated
    Inventors: Scott R. Summerfelt, Jason Reid, Marc Nicolet, Elzbieta Kolawa
  • Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
    Patent number: 5696018
    Abstract: A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: December 9, 1997
    Assignee: Texas Instruments Incorporated
    Inventors: Scott R. Summerfelt, Jason Reid, Marc Nicolet, Elzbieta Kolawa
  • Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
    Patent number: 5622893
    Abstract: A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
    Type: Grant
    Filed: August 1, 1994
    Date of Patent: April 22, 1997
    Assignees: Texas Instruments Incorporated, California Institute of Technology
    Inventors: Scott R. Summerfelt, Jason Reid, Marc Nicolet, Elzbieta Kolawa
  • Tungsten barrier contact
    Patent number: 4478881
    Abstract: A semiconductor contact has a thin barrier layer less than 500 angstroms in thickness of a metal such as tungsten applied between an aluminum contact layer and a metal-semiconductor compound. The metal semiconductor compound forms a junction with an underlying semiconductor substrate. The thin barrier prevents a chemical reaction between the aluminum of the contact layer and the metal of the metal-semiconductor compound.
    Type: Grant
    Filed: December 28, 1981
    Date of Patent: October 23, 1984
    Assignee: Solid State Devices, Inc.
    Inventors: Meir Bartur, Marc Nicolet