Abstract: One implementation is a method for fabricating a semiconductor on a substrate. A first layer is formed on the substrate. An implanted pattern is introduced into the first layer by implanting using a structured implantation mask arranged over the first layer. A structured second layer is formed on the first layer after removing the implantation mask. A first pattern is generated in the substrate using the second layer as a mask. The first layer is developed with regard to the implanted pattern. A second pattern is generated in the substrate using the first layer as a mask.

Abstract: The invention relates to a method of cleaning membrane filters comprising hollow fibres and an inner skin. The inventive method comprises the following steps consisting in: emptying the concentrate compartment in order to release the liquid to be filtered contained therein and the suspended matter, and, subsequently, performing a backwashing step involving the passage of liquid from the permeate compartment into the concentrate compartment through membranes in order to detach and release impurities deposited thereon, while circulating a gas in the concentrate. According to the invention, backwashing liquid and/or gas pulses are produced by control means (5, 5a; 7, 7a) during at least one backwashing phase.