Patents by Inventor Marc Philippens
Marc Philippens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8866181Abstract: In at least one embodiment of the component (10) the latter comprises a first substrate (1) and a second substrate (2), at least one radiation-emitting or radiation-receiving element (3) being arranged on the first substrate (1), which element contains at least one organic material. The first substrate (1) and the second substrate (2) are arranged relative to one another such that the element (3) is located between the first substrate (1) and second substrate (2). The first substrate (1) and second substrate (2) are bonded together mechanically by means of a bonding agent (4) arranged in a sheet between the first substrate (1) and the second substrate (2), which bonding agent contains a glass and surrounds the element (3) with the organic material in the manner of a frame.Type: GrantFiled: June 15, 2010Date of Patent: October 21, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Marc Philippens, Tilman Schlenker, Karsten Heuser
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Patent number: 8829496Abstract: A device comprising: a first substrate (1); a second substrate; at least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate; the first substrate (1) and the second substrate (2) being arranged relative to one another in such a way that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate; a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), said bonding material enclosing the optoelectronic component (4) in a frame type fashion and mechanically connecting the first and second substrates (1, 2) to one another; and wherein the bonding material (3) was softened by an exothermic chemical process of a reactive material (7) for mechanically connecting the substrates (1, 2).Type: GrantFiled: July 8, 2010Date of Patent: September 9, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Marc Philippens, Tilman Schlenker
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Patent number: 8808402Abstract: An arrangement (1) for holding a substrate (10) in a material deposition apparatus, which substrate (10) has a deposition side (10a) upon which material (M) is to be deposited, and which arrangement (1) comprises: a shadow mask (20) comprising a number of deposition openings (Di); a support structure (30) comprising a number of surround openings (Si); and a support structure holding means (6) for holding the support mask (30) and/or a substrate holding means (5) for holding the substrate (10), such that the support structure (30) is on the same side as the deposition side (10a) of the substrate (10), and the shadow mask (20) is positioned between the substrate (10) and the support structure (30) such that at least one deposition opening (Di) of the shadow mask (10) lies within a corresponding surround opening (Si) of the support structure (30).Type: GrantFiled: March 29, 2010Date of Patent: August 19, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Johannes Krijne, Erwin Eiling, Karl-Heinz Hohaus, Wolfgang Goergen, Andreas Lovich, Marc Philippens, Richard Scheicher, Ansgar Fischer, Martin Mueller
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Patent number: 8785916Abstract: Optoelectronic organic component, comprising: a first electrode, a first planarization layer which is disposed on the first electrode, a first injection layer which is disposed on the planarization layer, an organic functional layer which is disposed on the injection layer, a second electrode which is disposed on the organic functional layer, wherein in the case that the first electrode is an anode, the following applies for the energy levels: EF?EHOMO,Inj.??EHOMO,Plan. and EF?EHOMO,Inj<EHOMO,Funk. or in the case that the first electrode is a cathode, the following applies for the energy levels: ELUMO,Inj.?EF?ELUMO,Plan.?EF and ELUMO,Inj.?EF<ELUMO,Funk.?EF, wherein EF is the fermi energy, EHOMO is the energy of the highest occupied energy level of the respective layer and ELUMO is the energy of the lowest unoccupied energy level of the respective layer.Type: GrantFiled: September 29, 2010Date of Patent: July 22, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Marc Philippens, Ralph Paetzold, Wiebke Sarfert, David Hartmann, Arvid Hunze, Ralf Krause
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Patent number: 8657889Abstract: An arrangement (1) for holding a substrate (10) in a material deposition apparatus, which substrate (10) has a deposition side (10a) upon which material (M) is to be deposited, and which arrangement (1) comprises: a shadow mask (20) comprising a number of deposition openings (Di); a support structure (30) comprising a number of surround openings (Si); and a support structure holding means (6) for holding the support mask (30) and/or a substrate holding means (5) for holding the substrate (10), such that the support structure (30) is on the same side as the deposition side (10a) of the substrate (10), and the shadow mask (20) is positioned between the substrate (10) and the support structure (30) such that at least one deposition opening (Di) of the shadow mask (10) lies within a corresponding surround opening (Si) of the support structure (30).Type: GrantFiled: March 29, 2010Date of Patent: February 25, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Johannes Krijne, Erwin Eiling, Karl-Heinz Hohaus, Wolfgang Goergen, Andreas Lovich, Marc Philippens, Richard Scheicher, Ansgar Fischer, Martin Mueller
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Publication number: 20120256170Abstract: A device comprising: a first substrate (1); a second substrate; at least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate; the first substrate (1) and the second substrate (2) being arranged relative to one another in such a way that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate; a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), said bonding material enclosing the optoelectronic component (4) in a frame type fashion and mechanically connecting the first and second substrates (1, 2) to one another; and wherein the bonding material (3) was softened by an exothermic chemical process of a reactive material (7) for mechanically connecting the substrates (1, 2).Type: ApplicationFiled: July 8, 2010Publication date: October 11, 2012Inventors: Marc Philippens, Tilman Schlenker
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Publication number: 20120241802Abstract: In at least one embodiment of the component (10) the latter comprises a first substrate (1) and a second substrate (2), at least one radiation-emitting or radiation-receiving element (3) being arranged on the first substrate (1), which element contains at least one organic material. The first substrate (1) and the second substrate (2) are arranged relative to one another such that the element (3) is located between the first substrate (1) and second substrate (2). The first substrate (1) and second substrate (2) are bonded together mechanically by means of a bonding agent (4) arranged in a sheet between the first substrate (1) and the second substrate (2), which bonding agent contains a glass and surrounds the element (3) with the organic material in the manner of a frame.Type: ApplicationFiled: June 15, 2010Publication date: September 27, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Marc Philippens, Tilman Schlenker, Karsten Heuser
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Publication number: 20120241729Abstract: Optoelectronic organic component, comprising: a first electrode, a first planarization layer which is disposed on the first electrode, a first injection layer which is disposed on the planarization layer, an organic functional layer which is disposed on the injection layer, a second electrode which is disposed on the organic functional layer, wherein in the case that the first electrode is an anode, the following applies for the energy levels: EF-EHOMO,Inj.?EF-EHOMO,Plan. and EF-EHOMO,Inj.<EF-EHOMO,Funk. or in the case that the first electrode is a cathode, the following applies for the energy levels: ELUMO,Inj.-EF?ELUMO,Plan.-EF and ELUMO,Inj.-EF<ELUMO,Funk.-EF, wherein EF is the fermi energy, EHOMO is the energy of the highest occupied energy level of the respective layer and ELUMO is the energy of the lowest unoccupied energy level of the respective layer.Type: ApplicationFiled: September 29, 2010Publication date: September 27, 2012Applicant: Osram Opto Semiconductors GmbHInventors: Marc Philippens, Ralph Paetzold, Wiebke Sarfert, David Hartmann, Arvid Hunze, Ralf Krause
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Publication number: 20120178190Abstract: An arrangement (1) for holding a substrate (10) in a material deposition apparatus, which substrate (10) has a deposition side (10a) upon which material (M) is to be deposited, and which arrangement (1) comprises: a shadow mask (20) comprising a number of deposition openings (Di); a support structure (30) comprising a number of surround openings (Si); and a support structure holding means (6) for holding the support mask (30) and/or a substrate holding means (5) for holding the substrate (10), such that the support structure (30) is on the same side as the deposition side (10a) of the substrate (10), and the shadow mask (20) is positioned between the substrate (10) and the support structure (30) such that at least one deposition opening (Di) of the shadow mask (10) lies within a corresponding surround opening (Si) of the support structure (30).Type: ApplicationFiled: March 29, 2010Publication date: July 12, 2012Inventors: Johannes Krijne, Erwin Eiling, Karl-Heinz Hohaus, Wolfgang Goergen, Andreas Lovich, Marc Philippens, Richard Scheicher, Ansgar Fischer, Martin Mueller
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Publication number: 20120139001Abstract: Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (1) having an active region (12) and a first connection region (11) surrounding said active region (12), wherein an organic, functional layer sequence (3) is formed in said active region (12), B) providing a second substrate (2) having a cover region (22) and a second connection region (21) surrounding said cover region (22), C) applying a first connection layer (4) made from a first glass solder material directly to said second substrate (2) in said second connection region (21), D) vitrifying (91) said first glass solder material of said first connection layer (4), E) applying a second connection layer (5) to said vitrified first connection layer (4) or to said first connection region (11) of said first substrate (1) and F) connecting said first substrate (1) to said second substrate (2) such that said second connection layer (5) connects said first connection region (11) to said first connectionType: ApplicationFiled: December 10, 2009Publication date: June 7, 2012Inventors: Angela Eberhardt, Tilman Schlenker, Marc Philippens, Ulrike Beer, Joachim Wirth-Schoen, Florian Peskoller, Ewald Poesl
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Publication number: 20110070456Abstract: A method for producing an organic electronic component comprises, in particular, the following steps: A) producing at least one functional layer stack (10) with the following substeps: A1) providing a flexible first substrate (1), A2) applying at least one organic layer (2) in large-area fashion on the first substrate (1) by means of a coil coating plant (90), and A3) singulating the first substrate (1) with the at least one organic layer (2) into a plurality of functional layer stacks (10); B) providing a second substrate (5), which has a lower flexibility and a higher impermeability with respect to moisture and oxygen than the first substrate (1); and C) applying the at least one of the plurality of the functional layer stacks (10) with a surface (11) of the first substrate (1) remote from the organic layer (2) on the second substrate (5).Type: ApplicationFiled: June 17, 2009Publication date: March 24, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Marc Philippens, Richard Scheicher, Andreas Lovich, Ansgar Fischer, Martin Muller, Karsten Heuser, Ralph Paetzold
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Patent number: 7856045Abstract: A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6) being formed in the semiconductor body.Type: GrantFiled: December 5, 2006Date of Patent: December 21, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Marc Philippens, Tony Albrecht, Martin Müller, Wolfgang Schmid
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Patent number: 7693201Abstract: A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).Type: GrantFiled: October 26, 2004Date of Patent: April 6, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Tony Albrecht, Peter Brick, Marc Philippens, Glenn-Yves Plaine
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Patent number: 7672353Abstract: A semiconductor laser device has an optically pumped, surface-emitting vertical emitter with a radiation-generating vertical emitter zone comprising a layer containing an organic material and a monolithically integrated pump radiation source for the optical pumping of the vertical emitter. The pump radiation source is designed to emit pump radiation in a main radiation direction transverse to the main radiation direction of the vertical emitter.Type: GrantFiled: September 26, 2007Date of Patent: March 2, 2010Assignee: Osram Opto Semiconductors GmbHInventor: Marc Philippens
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Patent number: 7646799Abstract: An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).Type: GrantFiled: September 25, 2007Date of Patent: January 12, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Peter Brick, Johann Luft, Martin Müller, Marc Philippens
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Patent number: 7620087Abstract: A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength ?1 (11) and the second active zone being provided for generating a radiation having a second wavelength ?2 (22), the radiation having the first wavelength ?1 being coherent and the radiation having the second wavelength ?2 being incoherent.Type: GrantFiled: January 31, 2005Date of Patent: November 17, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Marc Philippens, Tony Albrecht
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Patent number: 7524687Abstract: A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.Type: GrantFiled: February 26, 2008Date of Patent: April 28, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Glenn-Yves Plaine, Tony Albrecht, Peter Brick, Marc Philippens
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Publication number: 20080181277Abstract: A semiconductor laser comprising a laser-active layer sequence (1) having a first main face (1003), on which is arranged a heat conducting layer (3) containing carbon nanotubes (30) and a method for producing such a semiconductor laser.Type: ApplicationFiled: October 1, 2007Publication date: July 31, 2008Applicant: Osram Opto Semiconductors GmbHInventors: Harald Konig, Martin Muller, Marc Philippens
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Publication number: 20080153189Abstract: A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.Type: ApplicationFiled: February 26, 2008Publication date: June 26, 2008Inventors: Glenn-Yves Plaine, Tony Albrecht, Peter Brick, Marc Philippens
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Publication number: 20080123710Abstract: An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).Type: ApplicationFiled: September 25, 2007Publication date: May 29, 2008Applicant: OSRAM Opto Semiconductors GmbHInventors: Peter Brick, Johann Luft, Martin Muller, Marc Philippens