Abstract: A method for producing, on a structure based on a material III-V, of a dielectric layer, the method comprising producing a first dielectric film by ALD by carrying out a plurality of first cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a first material and one injection in the reaction chamber of a water or ozone-based precursor; and producing, on the first dielectric film, a second dielectric film by plasma-enhanced ALD by carrying out a plurality of second cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a second material and one injection in the reaction chamber of an oxygen or nitrogen based precursor.

Abstract: A method for producing an aluminium nitride (AlN)-based layer on a structure with the basis of silicon (Si) or with the basis of a III-V material, may include several deposition cycles performed in a plasma reactor comprising a reaction chamber inside which is disposed a substrate having the structure. Each deposition cycle may include at least the following: deposition of aluminium-based species on an exposed surface of the structure, the deposition including at least one injection into the reaction chamber of an aluminium (Al)-based precursor; and nitridation of the exposed surface of the structure, the nitridation including at least one injection into the reaction chamber of a nitrogen (N)-based precursor and the formation in the reaction chamber of a nitrogen-based plasma. During the formation of the nitrogen-based plasma, a non-zero polarisation voltage Vbias_substrate may be applied to the substrate.

Abstract: An electronic component may include a carrier, and a thermoelectric sensor and a power transistor which are arranged on the carrier. The power transistor may include a base layer containing a transistor material chosen from among gallium nitride, aluminium gallium nitride, gallium arsenide, indium gallium, indium gallium nitride, aluminium nitride, indium aluminium nitride, and mixtures thereof. The electronic component may be configured so that the thermoelectric sensor generates an electric current under the effect of heating from the power transistor.

Abstract: A multilayer thermoelectric sensor for generating an electric current under the effect of heating includes a support and a thermocouple borne by the support. The thermocouple includes a first thermoelectric member having at least a portion of a bilayer, the layers of which are made of different materials, and a second thermoelectric member having a p-doped semiconductor material and/or a thermoelectric metal. The thermocouple is configured to generate an electron gas at the interface between the layers of the bilayer when the thermoelectric sensor is heated.

Abstract: The thermoelectric device includes a first leg made from a first material, anchored at the level of its first end to a support, and a second leg made from a second material, anchored at the level of its first end to said support. In addition, an electric connecting element provided with first and second contact areas is respectively in electric contact with the first leg and second leg so as to form a thermocouple. The device includes means for varying the position of the first and contact areas at the level of the first and second legs.

Abstract: The thermoelectric module includes a first electric path including a first set of thermocouples electrically connected in series. It further includes a second electric path including a second set of thermocouples electrically connected in series, the number of thermocouples of the second set being smaller than the number of thermocouples of the first set.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

Abstract: A method for making a thermoelectric microstructure includes: forming an insulating substrate; forming, on the substrate, a first assembly of conductor or semiconductor elements extending in parallel and in a first direction from first to second connection areas, and having a first Seebeck coefficient; forming, on the substrate, a second assembly of conductor or semiconductor elements electrically insulated from the first assembly and extending in parallel and in a second direction other than the first one, from the first to second connection areas, and having a second Seebeck coefficient other than the first one; providing, in the first and second connection areas, electric connection elements, each of which electrically connects at least one element of first and second assemblies; two conductor or semiconductor elements of a single assembly are separated in a predetermined direction by a predetermined average distance in the connection areas.

Abstract: A thermoelectric device includes first and second legs extending continuously between first and second heat sources. The first and second legs respectively include first and second conducting elements and third and fourth conducting elements. The first and third conducting elements are adjacent and separated by an insulator. The second and fourth conducting elements are adjacent and separated by an insulator. The device also includes selection means enabling formation of a first thermocouple from the first and second conducting elements and formation of a second thermocouple from the third and fourth conducting elements.

Abstract: An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 ?m.

Abstract: A method for thermal characterization of a portion of first material of elongate shape on which there is arranged a portion of a second, electrically conductive material of elongate shape, the method including: a) determining characteristic of the portion of second material, b) applying an electric current of angular frequency between ends of the portion of the second material, and measuring the angular frequency harmonic of the electric voltage between these ends for different values of angular frequency, c) calculating coefficient of thermal conductivity of the portion of first material from the values of the harmonic and of the determined characteristic, a width of the portion of the first material being between about 0.9 and 1.1 times the width of the portion of second material, the portion of first material being surrounded by thermal insulation.

Abstract: The thermoelectric module includes a first electric path including a first set of thermocouples electrically connected in series. It further includes a second electric path including a second set of thermocouples electrically connected in series, the number of thermocouples of the second set being smaller than the number of thermocouples of the first set.

Abstract: The thermoelectric device includes a first leg made from a first material, anchored at the level of its first end to a support, and a second leg made from a second material, anchored at the level of its first end to said support. In addition, an electric connecting element provided with first and second contact areas is respectively in electric contact with the first leg and second leg so as to form a thermocouple. The device includes means for varying the position of the first and contact areas at the level of the first and second legs.

Abstract: A thermoelectric device includes first and second legs extending continuously between first and second heat sources. The first and second legs respectively include first and second conducting elements and third and fourth conducting elements. The first and third conducting elements are adjacent and separated by an insulator. The second and fourth conducting elements are adjacent and separated by an insulator. The device also includes selection means enabling formation of a first thermocouple from the first and second conducting elements and formation of a second thermocouple from the third and fourth conducting elements.

Abstract: The thermoelectric structure is formed by a network of wires oriented substantially in a weft direction of the structure. It comprises first and second conducting wires of different kinds, interwoven to form cold and hot junctions distributed respectively in a top plane and a bottom plane. The junctions are alternately cold and hot along any one conducting wire. The thermoelectric structure comprises at least one high dielectric wire in the top plane, and at least one low dielectric wire in the bottom plane. The dielectric wires are interwoven with the first and second conducting wires so as to keep the top and bottom planes at a distance from one another.

Abstract: An electric generator based on a thermoelectric effect includes at least a heat source, a heat dissipator and a thermoelectric converter provided with at least two areas respectively in contact with the heat source and the heat dissipator. The heat source is the center of an exothermic chemical reaction, such as the catalytic combustion of hydrogen. The heat dissipator is the center of an endothermic chemical reaction, at least one product of which forms one of the reagents of the exothermic chemical reaction. Once it is formed by the heat dissipator, said product is then directed towards the input of the heat source in order to react there. The endothermic chemical reaction is more particularly a steam reforming reaction for methanol.

Abstract: An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 ?m.

Abstract: A method for thermal characterization of a portion of first material of elongate shape on which there is arranged a portion of a second, electrically conductive material of elongate shape, the method including: a) determining characteristic of the portion of second material, b) applying an electric current of angular frequency between ends of the portion of the second material, and measuring the angular frequency harmonic of the electric voltage between these ends for different values of angular frequency, c) calculating coefficient of thermal conductivity of the portion of first material from the values of the harmonic and of the determined characteristic, a width of the portion of the first material being between about 0.9 and 1.1 times the width of the portion of second material, the portion of first material being surrounded by thermal insulation.

Abstract: A method for making a thermoelectric microstructure includes: forming an insulating substrate; forming, on the substrate, a first assembly of conductor or semiconductor elements extending in parallel and in a first direction from first to second connection areas, and having a first Seebeck coefficient; forming, on the substrate, a second assembly of conductor or semiconductor elements electrically insulated from the first assembly and extending in parallel and in a second direction other than the first one, from the first to second connection areas, and having a second Seebeck coefficient other than the first one; providing, in the first and second connection areas, electric connection elements, each of which electrically connects at least one element of first and second assemblies; two conductor or semiconductor elements of a single assembly are separated in a predetermined direction by a predetermined average distance in the connection areas.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.