Abstract: A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.

Abstract: A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.

Abstract: A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.

Abstract: A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.

Abstract: A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.

Abstract: A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.

Abstract: The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.

Abstract: The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.

Abstract: The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.

Abstract: Method of fabricating a microelectronic structure includes preparing a first structure having a first material different from silicon on a surface thereof and forming at least one covering layer of a second material by IBS (ion beam sputtering) and having a thickness of less than one micron, where the at least one cover layer has a free surface and molecular bonding the free surface to one face of a second structure where the at least one covering layer constitutes a bonding layer for the first and second structures.

Abstract: The invention concerns a photolithography fabrication method enabling production of patterns in a photosensitive resin layer (601) placed on a substrate (600). The patterns (607) comprise flanks (608) inclined relative to a normal ({right arrow over (n)}) relative to the principal plane of the substrate and which have an angle of inclination (?) far greater to that of the patterns obtained according to the prior art. The invention also concerns a device allowing said method to be executed.

Abstract: The invention concerns a microstructure comprising an adhesive layer between a substrate and a photo-patternable layer, arranged on at least one face of the substrate. The adhesive layer is photosensitive and consists of a negative resin comprising at least one polymer of the family of elastomers and at least one photo-initiating component, in solution in an aromatic solvent. The photo-patternable layer consists of at least one negative epoxy resin. The method of fabrication of such a microstructure comprises spreading and drying the adhesive layer prior to depositing the photo-patternable layer. The adhesive layer can be exposed through a mask and developed, prior to the deposition of the photo-patternable layer.

Abstract: Process for the formation of at least one concave relief (124, 145) in a substrate comprising forming at least one embossment of material subject to creep (100) on the substrate (120), —heating of the material subject to creep to a temperature sufficiently high to cause creep of the said material, and—etching of the substrate and the crept material to form relief in the substrate. According to the invention, the crept material is solidified in a state in which it has a concave relief.

Abstract: Process for the formation of at least one concave relief (124, 145) in a substrate comprising the following steps:

Abstract: Process and apparatus for the formation of patterns in a photosensitive resin layer or photoresist by continuous laser irradiation, application to the production of microtip emissive cathode electron sources and flat display screens. Formation takes place of non-mutually interfering elementary light beams (41), there is at least one relative translation at constant light power and speed of said beams with respect to the layer in order to irradiate lines thereof, each line receiving a light dose lower than that necessary for the development of the resin, a relative rotation of all the beams with respect to the layer takes place, the translation is recommenced in order to irradiate other lines, each line receiving a light dose complimentary to the preceding dose and the resin is developed.

Abstract: This invention relates to a procedure for assembling two structures (2, 4) comprising:formation on at least one of the structures of studs (12, 14, 16) made of a material that can flow and is wettable on both structures,positioning of the two structures such that said studs are on their interface,assembly of the two structures by heating the studs causing them to flow, and by bringing the two structures together as intimately as possible.According to a different procedure, joints made of a fluidizable, wettable material are incorporated in notches etched into one of the structures to be assembled.Application to microlasers.

Abstract: A microlaser cavity including an entry mirror, an exit mirror (36), an active laser medium. Also included is a mechanism for selecting cavity transverse modes when the cavity is pumped, in order to enable oscillation of one or several cavity transverse modes and to prevent oscillation of other cavity transverse modes.

Abstract: Microlaser cavity and externally controlled, passive switching, pulses solid microlaser including a saturable absorber 46 and a device (60, 62) for introducing a beam 56 into the microlaser cavity initiating or starting saturation of the saturable absorber.

Abstract: A microoptical component including a microlens having a focal axis and a microbeam to which said microlens, is integrally fixed said microbeam extending along an axis substantially perpendicular to the focal axis of the microlens and undergoing elastic deformations along an axis substantially perpendicular to the focal axis of the microlens and to the axis along which the microbeam extends.

Abstract: The invention relates to a microlaser cavity, with active Q switching, characterized in that it comprises:an active laser medium (20), an input mirror (22) and an output mirror (24, 87) defining the cavity,a micromodulator with frustrated total internal reflection, comprising two microprisms (32, 34) made of a certain material of index n.sub.1 each having at least one planar face (36, 38), the two planar faces being approximately parallel to each other and inclined on the microlaser cavity axis, thereby defining a plate (30) of a certain material of index n.sub.2 less than n.sub.1.means (44, 46, 48, 50, 52, 54) for varying the thickness of the plate.