Patents by Inventor Marc Rippen

Marc Rippen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High permittivity nanocomposites for electronic devices
    Patent number: 10541090
    Abstract: The invention pertains to the field of electronic devices and the preparation thereof. In an aspect is an electronic device comprising a nanocomposite of carbon nanodomains homogeneously embedded in an insulating ceramic matrix, wherein the size and distribution of carbon nanodomains is such that the nanocomposite has a permittivity of greater than or equal to 200.
    Type: Grant
    Filed: September 6, 2015
    Date of Patent: January 21, 2020
    Assignee: SRI International
    Inventors: Yigal D Blum, Winston K. Chan, John W. Hodges, David K. Hui, Srinivasan Krishnamurthy, David Brent McQueen, Marc Rippen
  • High Permittivity Nanocomposites for Electronic Devices
    Publication number: 20160005552
    Abstract: The invention pertains to the field of electronic devices and the preparation thereof. In an aspect is an electronic device comprising a nanocomposite of carbon nanodomains homogeneously embedded in an insulating ceramic matrix, wherein the size and distribution of carbon nanodomains is such that the nanocomposite has a permittivity of greater than or equal to 200.
    Type: Application
    Filed: September 6, 2015
    Publication date: January 7, 2016
    Applicant: SRI INTERNATIONAL
    Inventors: Yigal D. Blum, Winston K. Chan, John W. Hodges, David K. Hui, Srinivasan Krishnamurthy, David Brent McQueen, Marc Rippen
  • Enhanced E-field sensing using negative capacitance FET subthreshold slope enhancement
    Patent number: 8653510
    Abstract: In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a film, first and second gates on the film, a ferroelectric material layer covering the film and gates, an insulating layer substantially covering the ferroelectric material layer, a source and a drain on the insulating layer, and a pentacene layer.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: February 18, 2014
    Assignee: SRI International
    Inventors: John Hodges, Jr., Marc Rippen, Carl Biver, Jr.
  • Method and apparatus for error correction on a mobile device
    Patent number: 8321759
    Abstract: A method and apparatus for distributing dynamically reconfigurable content to a mobile device is provided. One embodiment of a method for encoding a data stream to enable error correction by a receiver of the data stream includes storing a block of the data stream in a first memory array, processing the first memory array to produce a second memory array, inverting the second memory array, and storing the second memory array, as inverted, as a third memory array.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: November 27, 2012
    Assignee: SRI International
    Inventors: John W. Hodges, Marc Rippen, Lawrence Bach, Lawrence Langebrake
  • THREE-DIMENSIONAL ELECTROMAGNETIC METAMATERIALS AND METHODS OF MANUFACTURE
    Publication number: 20120288627
    Abstract: In certain embodiments, a method may include a computing device generating a digital representation of a metamaterial structure and sectioning the digital representation to generate a plurality of substantially two-dimensional layer layouts. The method may also include a printing device sequentially fabricating each of a plurality of substantially two-dimensional layers based on a corresponding one of the plurality of substantially two-dimensional layer layouts.
    Type: Application
    Filed: December 17, 2010
    Publication date: November 15, 2012
    Applicant: SRI INTERNATIONAL
    Inventors: John W. Hodges, JR., Marc Rippen, Carl J. Biver, JR.
  • ENHANCED E-FIELD SENSING USING NEGATIVE CAPACITANCE FET SUBTHRESHOLD SLOPE ENHANCEMENT
    Publication number: 20110147723
    Abstract: In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a film, first and second gates on the film, a ferroelectric material layer covering the film and gates, an insulating layer substantially covering the ferroelectric material layer, a source and a drain on the insulating layer, and a pentacene layer.
    Type: Application
    Filed: December 17, 2010
    Publication date: June 23, 2011
    Applicant: SRI INTERNATIONAL
    Inventors: John Hodges, JR., Marc Rippen, Carl Biver, JR.
  • METHOD AND APPARATUS FOR ERROR CORRECTION ON A MOBILE DEVICE
    Publication number: 20110107179
    Abstract: A method and apparatus for distributing dynamically reconfigurable content to a mobile device is provided. One embodiment of a method for encoding a data stream to enable error correction by a receiver of the data stream includes storing a block of the data stream in a first memory array, processing the first memory array to produce a second memory array, inverting the second memory array, and storing the second memory array, as inverted, as a third memory array.
    Type: Application
    Filed: November 2, 2009
    Publication date: May 5, 2011
    Inventors: JOHN W. HODGES, MARC RIPPEN, LAWENCE BACH, LAWRENCE LANGEBRAKE