Abstract: The invention relates to a textile elementary monofilament consisting of a polyester, said textile elementary monofilament having a melting point Tm of greater than or equal to 240° C., a tenacity of greater than or equal to 2.5 cN/tex and an elongation at break of greater than or equal to 10%, and also to a process for producing such a monofilament.

Abstract: For processing a signal from an event-based sensor having an array of sensing elements facing a scene, the method comprises: receiving the signal including, for each sensing element, successive events originating from said sensing element depending on variations of incident light from the scene; analyzing the signal to detect a frequency pattern in a light profile sensed by at least one sensing element; and extracting information from the scene in response to detection of the frequency pattern.

Abstract: For processing a signal from an event-based sensor having an array of sensing elements facing a scene, the method comprises: receiving the signal including, for each sensing element, successive events originating from said sensing element depending on variations of incident light from the scene; analyzing the signal to detect a frequency pattern in a light profile sensed by at least one sensing element; and extracting information from the scene in response to detection of the frequency pattern.

Abstract: For processing a signal from an event-based sensor having an array of sensing elements facing a scene, the method comprises: receiving the signal including, for each sensing element, successive events originating from said sensing element depending on variations of incident light from the scene; analyzing the signal to detect a frequency pattern in a light profile sensed by at least one sensing element; and extracting information from the scene in response to detection of the frequency pattern.

Abstract: For processing a signal from an event-based sensor having an array of sensing elements facing a scene, the method comprises: receiving the signal including, for each sensing element, successive events originating from said sensing element depending on variations of incident light from the scene; analyzing the signal to detect a frequency pattern in a light profile sensed by at least one sensing element; and extracting information from the scene in response to detection of the frequency pattern.

Abstract: There is described a method for simulating an imaging process for an organ, the method comprising: retrieving from a memory a 3D volume model of the organ, the 3D volume model describing a 3D structure of the organ and a distribution of density within the 3D structure, the 3D structure representing a surface and internal features of the organ; generating a slice of the 3D model according to a position and an orientation of an imaging device, the slice including a cross-section of the surface and the internal features; rendering an image in accordance with the slice; and displaying the image.

Abstract: There is described a method for simulating an imaging process for an organ, the method comprising: retrieving from a memory a 3D volume model of the organ, the 3D volume model describing a 3D structure of the organ and a distribution of density within the 3D structure, the 3D structure representing a surface and internal features of the organ; generating a slice of the 3D model according to a position and an orientation of an imaging device, the slice including a cross-section of the surface and the internal features; rendering an image in accordance with the slice; and displaying the image.

Abstract: Semiconductor devices having deep trenches with fill material therein having low resistivity are provided along with methods of fabricating such semiconductor devices.

Abstract: Semiconductor structures having improved dopant configurations are obtained by use of barrier layers containing silicon, nitrogen, and oxygen atoms and having a thickness of about 5 to 50 Å. A doped semiconductor structure with controlled dopant configuration can be formed by: (a) providing a first semiconductor material region, (b) forming an interface layer comprising silicon, oxygen, and nitrogen on the first region, (c) forming a second semiconductor material region on the interface layer, the second semiconductor material region being on an opposite side of the interface layer from the first semiconductor material region, (d) providing a dopant in the second region, and (e) heating the first and second regions whereby at least a portion of the dopant diffuses from the second region through the interface layer to the first region.

Abstract: There is disclosed a method of forming a buried strap (BS) and its quantum conducting barrier (QCB) in a structure wherein a doped polycrystalline silicon region is exposed at the bottom of a recess and separated from a monocrystalline region of a silicon substrate by a region of an insulating material. First, a thin continuous layer of undoped amorphous silicon is deposited by LPCVD to coat said regions. The surface of this layer is nitridized to produce a Si3N4 QCB film. Now, at least one dual layer comprised of an undoped amorphous silicon layer and a dopant monolayer is deposited onto the structure by LPCVD. The recess is filled with undoped amorphous silicon to terminate the buried strap and its QCB. Finally, the structure is heated to activate the dopants in the buried strap to allow an electrical continuity between said polycrystalline and monocrystalline regions through the QCB by a quantum mechanical effect. All these steps are performed in situ in the same LPCVD tool.

Abstract: A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between said semiconductor regions. An undoped amorphous silicon layer continuously coats these two semiconductor regions and insulating layer. The surface of the undoped amorphous silicon layer is nitridized to produce a superficial film of a nitride based material to form the desired quantum conducting barrier (QCB). A stack consisting of at least one dual layer comprised of a bottom undoped amorphous silicon layer and a top dopant monolayer is formed on said undoped amorphous silicon layer. After thermal processing, the MQCB structure operates as a strap allowing an electrical continuity between these semiconductor regions through the QCB by a quantum mechanical effect.

Abstract: Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.

Abstract: A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550° C. to 720° C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 Å thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.