Patents by Inventor Marc Schaekers
Marc Schaekers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10090393Abstract: A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. A conformal layer of a first dielectric material is deposited directly on the patterned substrate. A layer of a sacrificial material is deposited overlying the conformal layer of the first dielectric material. The sacrificial material is patterned, whereby a part of the semiconductor region remains covered by the patterned sacrificial material. A layer of a second dielectric material is deposited on the patterned substrate, thereby completely covering the patterned sacrificial material. A recess is formed in the second dielectric material by completely removing the patterned sacrificial material. The exposed conformal layer of the first dielectric material is removed selectively to the semiconductor region.Type: GrantFiled: November 8, 2016Date of Patent: October 2, 2018Assignee: IMEC VZWInventors: Steven Demuynck, Zheng Tao, Boon Teik Chan, Liesbeth Witters, Marc Schaekers, Antony Premkumar Peter, Silvia Armini
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Patent number: 9997458Abstract: Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a CVD reactor; bringing the substrate in the CVD reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the CVD reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide.Type: GrantFiled: May 14, 2013Date of Patent: June 12, 2018Assignee: IMEC vzwInventors: Laure Elisa Carbonell, Antony Premkumar Peter, Marc Schaekers, Sven Van Elshocht, Zsolt Tokei
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Publication number: 20170141199Abstract: A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. A conformal layer of a first dielectric material is deposited directly on the patterned substrate. A layer of a sacrificial material is deposited overlying the conformal layer of the first dielectric material. The sacrificial material is patterned, whereby a part of the semiconductor region remains covered by the patterned sacrificial material. A layer of a second dielectric material is deposited on the patterned substrate, thereby completely covering the patterned sacrificial material. A recess is formed in the second dielectric material by completely removing the patterned sacrificial material. The exposed conformal layer of the first dielectric material is removed selectively to the semiconductor region.Type: ApplicationFiled: November 8, 2016Publication date: May 18, 2017Applicant: IMEC VZWInventors: Steven Demuynck, Zheng Tao, Boon Teik Chan, Liesbeth Witters, Marc Schaekers, Antony Premkumar Peter, Silvia Armini
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Patent number: 9633853Abstract: A method for forming an electrical contact to a semiconductor structure is provided. The method includes providing a semiconductor structure, providing a metal on an area of said semiconductor structure, wherein said area exposes a semiconductor material and is at least a part of a contact region, converting said metal to a Si-comprising or a Ge-comprising alloy, thereby forming said electrical contact on said area, wherein said converting is done by performing a vapor-solid reaction, whereby said semiconductor structure including said metal is subjected to a silicon-comprising precursor gas or a germanium-comprising precursor gas.Type: GrantFiled: December 3, 2015Date of Patent: April 25, 2017Assignee: IMEC VZWInventors: Antony Premkumar Peter, Marc Schaekers
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Publication number: 20160163648Abstract: A method for forming an electrical contact to a semiconductor structure is provided. The method includes providing a semiconductor structure, providing a metal on an area of said semiconductor structure, wherein said area exposes a semiconductor material and is at least a part of a contact region, converting said metal to a Si-comprising or a Ge-comprising alloy, thereby forming said electrical contact on said area, wherein said converting is done by performing a vapor-solid reaction, whereby said semiconductor structure including said metal is subjected to a silicon-comprising precursor gas or a germanium-comprising precursor gas.Type: ApplicationFiled: December 3, 2015Publication date: June 9, 2016Applicant: IMEC VZWInventors: Antony Premkumar Peter, Marc Schaekers
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Method for Manufacturing Germanide Interconnect Structures and Corresponding Interconnect Structures
Publication number: 20150130062Abstract: Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a CVD reactor; bringing the substrate in the CVD reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the CVD reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide.Type: ApplicationFiled: May 14, 2013Publication date: May 14, 2015Applicant: IMEC VZWInventors: Laure Elisa Carbonell, Antony Premkumar Peter, Marc Schaekers, Sven Van Elshocht, Zsolt Tokei -
Patent number: 7557027Abstract: A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone and it may be used to dilute the silicon source and the germanium source. The resultant reaction occurs at temperatures below 450 degrees C., thereby preventing degradation of electronic device and/or other devices/materials located in the substrate.Type: GrantFiled: January 24, 2006Date of Patent: July 7, 2009Assignee: Interuniversitair Microelektronica CentrumInventors: Ann Witvrouw, Maria Gromova, Marc Schaekers, Serge Vanhaelemeersch, Brenda Eyckens
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Publication number: 20060166467Abstract: A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone and it may be used to dilute the silicon source and the germanium source. The resultant reaction occurs at temperatures below 450 degrees C, thereby preventing degradation of electronic device and/or other devices/materials located in the substrate.Type: ApplicationFiled: January 24, 2006Publication date: July 27, 2006Applicant: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Ann Witvrouw, Maria Gromova, Marc Schaekers, Serge Vanhaelemeersch, Brenda Eyckens
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Patent number: 6844266Abstract: A method for anisotropic plasma etching of organic-containing insulating layers is disclosed. According to this method at least one opening is created in an organic-containing insulating layer formed on a substrate. These openings are created substantially without depositing etch residues by plasma etching said insulating layer in a reaction chamber containing a gaseous mixture which is composed such that the plasma etching is highly anisotropic. Examples of such gaseous mixtures are a gaseous mixture comprising a fluorine-containing gas and an inert gas, or a gaseous mixture comprising an oxygen-containing gas and an inert gas, or a gaseous mixture comprising HBr and an additive. The plasma etching of the organic-containing insulating layer can be performed using a patterned bilayer as an etch mask, said bilayer comprising a hard mask layer, being formed on said organic-containing insulating layer, and a resist layer being formed on said hard mask layer.Type: GrantFiled: March 12, 2003Date of Patent: January 18, 2005Assignee: Interuniversitair Microelektronica CentrumInventors: Karen Maex, Ricardo A. Donaton, Michael Baklanov, Serge Vanhaelemeersch, Herbert Struyf, Marc Schaekers
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Publication number: 20040071878Abstract: An exemplary method for depositing a layer on a surface of a dielectric layer where the dielectric layer contains an organic material comprises exposing the surface of the dielectric layer to a substance, such as a substance containing nitrogen. This exposure modifies, at least, the exposed surface of the dielectric layer. The method further includes depositing a layer, such as a barrier layer, using an atomic layer deposition process on the exposed surface of the dielectric layer. In certain embodiments, exposure of the wafer to the substance containing nitrogen result in a first region of the dielectric having a first concentration of nitrogen incorporated and a second region having a second amount of nitrogen incorporated in the dielectric layer, the second concentration being higher greater than the first concentration.Type: ApplicationFiled: August 15, 2003Publication date: April 15, 2004Applicant: Interuniversitair Microelektronica Centrum (IMEC VZW)Inventors: Jorg Schuhmacher, Ana Martin Hoyas, Marc Schaekers, Serge Vanhaelemeersch
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Patent number: 6387827Abstract: A method of growing a silicon oxide layer on a silicon substrate by means of a thermal oxidation in a furnace in the presence of a gaseous mixture, said mixture comprising oxygen and Cl2, said Cl2 being generated by an organic chlorine-carbon source, particularly oxalyl chloride. This method is directed to the growth of (ultra) thin silicon oxides and/or the cleaning of a substrate using a low oxidation power. Consequently the method disclosed is especially suited for temperature below 700° C. and for oxidation ambients containing only small amounts of oxygen.Type: GrantFiled: November 26, 1997Date of Patent: May 14, 2002Assignees: Imec (vzw), ASM International, OlinInventors: Paul Mertens, Michael McGeary, Hessel Sprey, Karine Kenis, Marc Schaekers, Marc Heyns