Patents by Inventor Marc Sherwin
Marc Sherwin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10629767Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: GrantFiled: December 27, 2018Date of Patent: April 21, 2020Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Narsingh B. Singh, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Publication number: 20190131480Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: ApplicationFiled: December 27, 2018Publication date: May 2, 2019Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: NARSINGH B. SINGH, JOHN V. VELIADIS, BETTINA NECHAY, ANDRE BERGHMANS, DAVID J. KNUTESON, DAVID KAHLER, BRIAN WAGNER, MARC SHERWIN
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Patent number: 10211359Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: GrantFiled: November 18, 2016Date of Patent: February 19, 2019Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Publication number: 20170194527Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: ApplicationFiled: November 18, 2016Publication date: July 6, 2017Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: NARSINGH B. SINGH, JOHN V. VELIADIS, BETTINA NECHAY, ANDRE BERGHMANS, DAVID J. KNUTESON, DAVID KAHLER, BRIAN WAGNER, MARC SHERWIN
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Patent number: 9570646Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: GrantFiled: February 20, 2014Date of Patent: February 14, 2017Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Publication number: 20150236186Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: ApplicationFiled: February 20, 2014Publication date: August 20, 2015Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: NARSINGH B. SINGH, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Patent number: 7830644Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.Type: GrantFiled: March 5, 2007Date of Patent: November 9, 2010Assignee: Northop Grumman Systems CorporationInventors: Narsingh B. Singh, John J. Talvacchio, Marc Sherwin, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, John D. Adam
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Publication number: 20080218940Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.Type: ApplicationFiled: March 5, 2007Publication date: September 11, 2008Applicant: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, John J. Talvacchio, Marc Sherwin, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, John D. Adam