Abstract: The present invention relates to a MEMS deformation sensor for measuring a relative movement between two regions of a structure, the sensor comprising: —a first portion (2) and a second portion (3) that are movable with respect to one another along a direction of measurement (X); —a thrust element (4) mounted fixed with respect to the first portion; —a first electrode (A) and a second electrode (B) that are capable of being raised to different electrical potentials, each mounted fixed with respect to the second portion; —a connecting portion (I) forming an electrical link between the first electrode and the second electrode, the thrust element applying a load to the connecting portion when the first portion moves with respect to the second portion along the direction of measurement beyond a predetermined distance, the electrical link being broken under the effect of the load.

Abstract: The present invention relates to a MEMS deformation sensor for measuring a relative movement between two regions of a structure, the sensor comprising: —a first portion (2) and a second portion (3) that are movable with respect to one another along a direction of measurement (X); —a thrust element (4) mounted fixed with respect to the first portion; —a first electrode (A) and a second electrode (B) that are capable of being raised to different electrical potentials, each mounted fixed with respect to the second portion; —a connecting portion (I) forming an electrical link between the first electrode and the second electrode, the thrust element applying a load to the connecting portion when the first portion moves with respect to the second portion along the direction of measurement beyond a predetermined distance, the electrical link being broken under the effect of the load.

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.

Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.

Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.