Abstract: Disclosed is a method for altering the visual performance of a subject using an optical system arranged in front of at least one eye of the subject, and including: b) determining an optotype; c) displaying the optotype to the subject in such a way that it is visible by the subject through the optical system; d) assessing the visual performance of the subject viewing the optotype through the optical system; and e) adding a positive or negative altering value of spherical optical power to the optical system. The method includes, before step b): a) choosing a target value of visual performance; and in that, at step b), the optotype has a size which is determined depending on the target value of visual performance; at step e), the altering value of spherical optical power is determined depending on the target value of visual performance.

Abstract: Disclosed is a method for altering the visual performance of a subject using an optical system arranged in front of at least one eye of the subject, and including: b) determining an optotype; c) displaying the optotype to the subject in such a way that it is visible by the subject through the optical system; d) assessing the visual performance of the subject viewing the optotype through the optical system; and e) adding a positive or negative altering value of spherical optical power to the optical system. The method includes, before step b): a) choosing a target value of visual performance; and and in that, at step b), the optotype has a size which is determined depending on the target value of visual performance; at step e), the altering value of spherical optical power is determined depending on the target value of visual performance.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.