Abstract: A method of preparing silicon semiconductor surfaces prior to metal silicide formation. In particular, it teaches a method of treating about 10 to about 200 Å of a surface of the silicon with a plasma source after activating the source and drain regions, prior to an HF etch and deposition of a metal for silicide formation. Discontinuities in the metal silicide formed on narrow polysilicon lines at the point where source and drain regions intersect are surprisingly diminished. This results in more continuous, uniform silicide formation hence the polysilicon lines and the source and drain regions have substantially lower resistance.

Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.

Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.