Patents by Inventor Marcel Bouvet

Marcel Bouvet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor tranducer and its use in a sensor for detecting electron-donor or electron-acceptor species
    Patent number: 8450725
    Abstract: The invention relates to a semi-conductor transducer, and to the use thereof in an electron donor or electron acceptor space sensor. Said transducer consists of an insulating substrate on the surface of which two electrodes and a semiconductor sensitive element are provided. The sensitive element consists of a layer of a semiconductor molecular material M1 having a conductivity C1 and a layer of a semiconductor molecular material M2 having a conductivity C2 and a forbidden bandwidth Eg2<1 eV. The material layer M1 is in contact with the electrodes. The material layer M2 is deposited on the material layer M1 and is not in contact with the electrodes. The conductivities are such that C2/C1?1.
    Type: Grant
    Filed: September 24, 2008
    Date of Patent: May 28, 2013
    Assignees: Universite Pierre et Marie Curie, Centre National de la Recherche
    Inventors: Marcel Bouvet, Vicente Parra
  • SEMICONDUCTOR TRANDUCER AND ITS USE IN A SENSOR FOR DETECTING ELECTRON-DONOR OR ELECTRON-ACCEPTOR SPECIES
    Publication number: 20100218593
    Abstract: The invention relates to a semi-conductor transducer, and to the use thereof in an electron donor or electron acceptor space sensor. Said transducer consists of an insulating substrate on the surface of which two electrodes and a semiconductor sensitive element are provided. The sensitive element consists of a layer of a semiconductor molecular material M1 having a conductivity C1 and a layer of a semiconductor molecular material M2 having a conductivity C2 and a forbidden bandwidth Eg2<1 eV. The material layer M1 is in contact with the electrodes. The material layer M2 is deposited on the material layer M1 and is not in contact with the electrodes. The conductivities are such that C2/C1?1.
    Type: Application
    Filed: September 24, 2008
    Publication date: September 2, 2010
    Inventors: Marcel Bouvet, Vicente Parra