Abstract: A distributed feedback (DFB) laser includes a substrate of a compound semiconductor material, and quantum-well (QW) active layer(s) overlying the substrate. A p-doped cladding layer including the compound semiconductor material is on one side of the active layer and an n-doped cladding layer is on the other side. A grating is in one of the cladding layers configured to select an operating wavelength for the DFB laser. A waveguide structure in the n-doped cladding layer includes a waveguide layer of a first composition compositionally different from the compound semiconductor material having an optical thickness of 0.7 to 1.5 of the guided wavelength. The waveguide structure can further include a hetero-waveguide stack including a plurality of alternating compositional layers beyond the waveguide layer each having a thickness between one quarter and one half the guided wavelength alternating the compound semiconductor material with a second composition defining a composition wavelength.

Abstract: A distributed feedback (DFB) laser includes a substrate of a compound semiconductor material, and quantum-well (QW) active layer(s) overlying the substrate. A p-doped cladding layer including the compound semiconductor material is on one side of the active layer and an n-doped cladding layer is on the other side. A grating is in one of the cladding layers configured to select an operating wavelength for the DFB laser. A waveguide structure in the n-doped cladding layer includes a waveguide layer of a first composition compositionally different from the compound semiconductor material having an optical thickness of 0.7 to 1.5 of the guided wavelength. The waveguide structure can further include a hetero-waveguide stack including a plurality of alternating compositional layers beyond the waveguide layer each having a thickness between one quarter and one half the guided wavelength alternating the compound semiconductor material with a second composition defining a composition wavelength.