Abstract: A semiconductor device includes a semiconductor substrate having an inactive area and a pair of active areas separated by the inactive area, a control terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area to define a conduction path during operation between a first conduction region in each active area and a second conduction region in each active area, a conduction terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area for electrical connection to each first conduction region, and a via extending through the semiconductor substrate, electrically connected to the conduction terminal, and positioned in the inactive area.

Abstract: A semiconductor device includes a semiconductor substrate having an inactive area and a pair of active areas separated by the inactive area, a control terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area to define a conduction path during operation between a first conduction region in each active area and a second conduction region in each active area, a conduction terminal supported by the semiconductor substrate and extending across the pair of active areas and the inactive area for electrical connection to each first conduction region, and a via extending through the semiconductor substrate, electrically connected to the conduction terminal, and positioned in the inactive area.

Abstract: A method of determining the intrinsic electrical characteristics of a device under test (DUT) includes determining a set of test measurements for a test structure including the device and determining test measurements for a number of de-embedding test structures. Based on the test measurements, DUT measurements are determined using both open-short and three-step de-embedding processes. The DUT measurements are combined to determine an imperfection error, which is used to adjust the calculations of a four-port de-embedding method. The adjusted calculations provide for a more accurate measurement of the parasitic elements in the test structure, thereby improving the determination of the intrinsic electrical characteristics of the device.

Abstract: A method of determining the intrinsic electrical characteristics of a device under test (DUT) includes determining a set of test measurements for a test structure including the device and determining test measurements for a number of de-embedding test structures. Based on the test measurements, DUT measurements are determined using both open-short and three-step de-embedding processes. The DUT measurements are combined to determine an imperfection error, which is used to adjust the calculations of a four-port de-embedding method. The adjusted calculations provide for a more accurate measurement of the parasitic elements in the test structure, thereby improving the determination of the intrinsic electrical characteristics of the device.