Abstract: A micromechanically produced optical device includes: a carrier for carrying the micromechanically produced device; a diffraction grating for diffracting light; a plate for carrying the diffraction grating; and deflectors for deflecting the plate in relation to the carrier, the deflectors comprising bearings for movably bearing the plate and a driver for moving the plate; the deflectors being configured for rotational deflection of the plate and for translational deflection of the plate.

Abstract: An optically pumped semiconductor disk laser including a pump light source, at least one semiconductor body (2), which semiconductor body (2) has at least one window region (8), an active region (7) and a reflection device (P), which reflection device has at least one first P-reflection element (P1) for the pump wavelength. The first P-reflection element (P1) is embodied and arranged such that pump light emerging from the pump light source (3) can be guided for at least two passes through the active region (7). A total thickness of the active region (7) and of the window region (8) in the direction of an optical axis of the semiconductor disk laser is less than three times the laser wavelength in the active region (7).

Abstract: A micromechanically produced optical device includes: a carrier for carrying the micromechanically produced device; a diffraction grating for diffracting light; a plate for carrying the diffraction grating; and deflectors for deflecting the plate in relation to the carrier, the deflectors comprising bearings for movably bearing the plate and a driver for moving the plate; the deflectors being configured for rotational deflection of the plate and for translational deflection of the plate.

Abstract: An optically pumped semiconductor disk laser including a pump light source, at least one semiconductor body (2), which semiconductor body (2) has at least one window region (8), an active region (7) and a reflection device (P), which reflection device has at least one first P-reflection element (P1) for the pump wavelength. The first P-reflection element (P1) is embodied and arranged such that pump light emerging from the pump light source (3) can be guided for at least two passes through the active region (7). A total thickness of the active region (7) and of the window region (8) in the direction of an optical axis of the semiconductor disk laser is less than three times the laser wavelength in the active region (7).

Abstract: The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySb1-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.

Abstract: The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySbi-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.