Abstract: A foil cartridge fillable with at least one fluid includes a foil bag as a cartridge shell and a rigid head part. The head part includes an outlet opening for emptying the fluid of the foil cartridge and an external thread for fastening the foil cartridge to a support sleeve. The foil bag is fixed to the head part in the region of the external thread.

Abstract: A foil cartridge Tillable with a fluid, includes a film bag cartridge forming a cartridge sleeve, and a solid head part including at least one outlet opening to dispense the fluid out of the foil cartridge and an external thread to attach the foil cartridge to a support sleeve. The film bag cartridge is attached to the head part in an area of the external thread.

Abstract: A cartridge assembly includes a cartridge and a sleeve, the cartridge having a solid head part and a cartridge wall formed by a film integrally formed with the head part, the cartridge being received in the sleeve.

Abstract: A foil cartridge Tillable with a fluid, includes a film bag cartridge forming a cartridge sleeve, and a solid head part including at least one outlet opening to dispense the fluid out of the foil cartridge and an external thread to attach the foil cartridge to a support sleeve. The film bag cartridge is attached to the head part in an area of the external thread.

Abstract: A cartridge assembly includes a cartridge and a sleeve, the cartridge having a solid head part and a cartridge wall formed by a film integrally formed with the head part, the cartridge being received in the sleeve.

Abstract: Controlling a clutch by means of an actuator, wherein at least one first shaft can be torque-transmittingly connected to a second shaft by means of the clutch, the clutch in one of at least three states, where in an disengaged first state, a torque cannot be transmitted, in a second state, a torque can be transmitted such that the speeds of the first shaft and the second shaft are synchronized in the second state, and in an engaged third state, a required torque can be transmitted; wherein, in various states and in an operating mode associated with the particular state, the actuator is adjusted at a different speed in order to adjust the clutch.

Abstract: Controlling a clutch by means of an actuator, wherein at least one first shaft can be torque-transmittingly connected to a second shaft by means of the clutch, the clutch in one of at least three states, where in an disengaged first state, a torque cannot be transmitted, in a second state, a torque can be transmitted such that the speeds of the first shaft and the second shaft are synchronized in the second state, and in an engaged third state, a required torque can be transmitted; wherein, in various states and in an operating mode associated with the particular state, the actuator is adjusted at a different speed in order to adjust the clutch.

Abstract: A method of forming a semiconductor device is disclosed including providing a semiconductor-on-insulator substrate comprising a semiconductor bulk substrate, a buried insulating layer positioned on the semiconductor bulk substrate and a semiconductor layer positioned on the buried insulating layer, providing at least one metal-oxide semiconductor gate structure positioned above the semiconductor layer comprising a gate electrode and a spacer formed adjacent to the gate electrode, selectively removing an upper portion of the semiconductor layer so as to define recessed portions of the semiconductor layer and epitaxially forming raised source/drain regions on the recessed portions of the semiconductor layer.

Abstract: A method of forming a semiconductor device is disclosed including providing a semiconductor-on-insulator substrate comprising a semiconductor bulk substrate, a buried insulating layer positioned on the semiconductor bulk substrate and a semiconductor layer positioned on the buried insulating layer, providing at least one metal-oxide semiconductor gate structure positioned above the semiconductor layer comprising a gate electrode and a spacer formed adjacent to the gate electrode, selectively removing an upper portion of the semiconductor layer so as to define recessed portions of the semiconductor layer and epitaxially forming raised source/drain regions on the recessed portions of the semiconductor layer.