Abstract: Photon or electron detectors may include polycrystalline silicon resistive gates with voltage gradients applied to reduce lag and improve operating speeds. The polycrystalline silicon resistive gates may be doped polycrystalline silicon which is heavily doped with donor atoms or acceptor atoms and ion-implanted with an electrically inactive species. The electrically inactive species may be implanted in a pattern to form multiple ion-implanted regions with different resistivities. The ion-implanted regions are formed in select patterns to control the resistivity of the polycrystalline silicon resistive gates and to modify the lateral electric field across the differentially-biased polycrystalline silicon resistive gate. The X-ray detectors may also include a circuit element with a current-mode differential connection to improve clock feedthrough and power dissipation characteristics.

Abstract: The loading effects of boron layers on silicon within a window may be reduced or eliminated by depositing an adhesion layer on a dielectric layer before depositing the boron layer. The adhesion layer may reduce or eliminate lateral diffusion of boron species into the window by being deposited on the adhesion layer. The approach using the adhesion layer may enable forming the boron layer at the nanometer scale within windows which are at the tens of millimeters scale and below. The boron layer and the silicon layer may form a detector which may be used in scanning electron microscopes and the like.

Abstract: The loading effects of boron layers on silicon within a window may be reduced or eliminated by depositing an adhesion layer on a dielectric layer before depositing the boron layer. The adhesion layer may reduce or eliminate lateral diffusion of boron species into the window by being deposited on the adhesion layer. The approach using the adhesion layer may enable forming the boron layer at the nanometer scale within windows which are at the tens of millimeters scale and below. The boron layer and the silicon layer may form a detector which may be used in scanning electron microscopes and the like.

Abstract: Photon or electron detectors may include polycrystalline silicon resistive gates with voltage gradients applied to reduce lag and improve operating speeds. The polycrystalline silicon resistive gates may be doped polycrystalline silicon which is heavily doped with donor atoms or acceptor atoms and ion-implanted with an electrically inactive species. The electrically inactive species may be implanted in a pattern to form multiple ion-implanted regions with different resistivities. The ion-implanted regions are formed in select patterns to control the resistivity of the polycrystalline silicon resistive gates and to modify the lateral electric field across the differentially-biased polycrystalline silicon resistive gate. The X-ray detectors may also include a circuit element with a current-mode differential connection to improve clock feedthrough and power dissipation characteristics.

Abstract: A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P?/N+ or an N+/N?/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Abstract: A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P?/N+ or an N+/N?/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Abstract: A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges.

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such an unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.