Abstract: The invention relates to a substrate made from a novel type of ceramic material. This material comprises 44-47 at. % A1, 31-39 at. % O, 8-13 at. % C and 8-12 at. % N. Substrates made from this material exhibit a relatively high heat conductance, a relatively great strength and their coefficient of expansion is equal to that of Si. Consequently, the substrates in accordance with the invention are very suitable for use in the Si-semiconductor technology. The main component of the ceramic material of the substrates preferably corresponds to the formula Al.sub.28 O.sub.21 C.sub.6 N.sub.6. The invention also provides methods of manufacturing substrates and other mouldings from this material.

Abstract: The invention relates to a substrate made from a novel type of ceramic material. This material comprises 44-47 at. % Al, 31-39 at. % O, 8-13 at. % C and 8-12 at. % N. Substrates made from this material exhibit a relatively high heat conductance, a relatively great strength and their coefficient of expansion is equal to that of Si. Consequently, the substrates in accordance with the invention are very suitable for use in the Si-semiconductor technology. The main component of the ceramic material of the substrates preferably corresponds to the formula Al.sub.28 O.sub.21 C.sub.6 N.sub.6. The invention also provides methods of manufacturing substrates and other mouldings from this material.

Abstract: The invention provides a ceramic body and a method of manufacturing such a body. The body is characterized by its composition, which comprises 20-30 at. % of magnesium, 20-30 at. % of silicon, 40-60 at. % of nitrogen and maximally 15 at. % of oxygen. A preferred composition corresponds to the formula MgSiN.sub.2-x O.sub.x, where x is smaller than 0.5. The manufacture of the ceramic body in accordance with the invention is simpler and cheaper than that of aluminium nitride, and a number of properties of said ceramic material are better than those of the known aluminium oxide.