Abstract: Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be improved by etching them, especially in a plasma assisted process, with fluorine, carbonyl fluoride, SF6 or NF3. Hereby, the surface is roughened so that the degree of light reflection is reduced, cracks caused from the sawing operation are prevented from proliferation, and glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed.

Abstract: Elemental fluorine and carbonyl fluoride are suitable etchants for producing microelectromechanical devices (“MEMS”). They are preferably applied as mixtures with nitrogen and argon. If applied in Bosch-type process, C4F6 is a highly suitable passivating gas.

Abstract: A tube trailer containing a gas comprising from 35 to 92.5 vol % of molecular fluorine. A semiconductor manufacturing plant having a gas supply system wherein such tube trailer is connected to the gas supply system of the semiconductor manufacturing plant. A method for supplying a gas comprising using such tube trailer to transport gas from a gas manufacturing site to a user site.

Abstract: A method for removing a silicon hydride from the surface of a solid body which comprises treating the silicon hydride with a gas comprising molecular fluorine or reactive species generated from molecular fluorine.

Abstract: For the plasma assisted manufacture of semiconductors, photovoltaic cells, thin film transistor liquid crystal displays and micro-electromechanical systems, and for chamber cleaning, F2 or COF2 is applied as etchant. It was found that a plasma emitter providing microwaves with a frequency of equal to or greater than 15 MHz provides plasma very effectively.

Abstract: Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be treated by etching them, in a plasma assisted process, with an etching gas containing or consisting of carbonyl fluoride. Hereby, the surface is roughened so that the degree of light reflection is reduced, or glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed. Carbonyl fluoride is also very suitable to selectively etch silicon oxide in silicon oxide/silicon composites.

Abstract: C4 compounds selected from the group of trifluorobutadienes and tetrafluorobutenes can be used as etching gases, especially for anisotropic etching in the production of etched items, for example, of semiconductors, e.g. semiconductor memories or semiconductor logic circuits, flat panels, or solar cells. Preferred compounds are 1,1,3-trifluoro-1,3-butadiene, (E)-1,1,1,3-tetrafluoro-2-butene, 2,4,4,4-tetrafluoro-1-butene and (Z)-1,1,1,3-tetrafluoro-2-butene which can be obtained from halotetrafluorobutanes or 1,1,1,3,3-pentafluorobutane by thermal, base-induced or catalytic dehydrohalogenation, especially by catalytic dehydrofluorination. The C4 compounds have the especial advantage that they allow the direct etching of photoresist-protected items where the pattern of the photoresist is defined by light of a wavelength of 193 nm, or even “extreme UV light”. Nodes with a very narrow gap, for example, nodes with gaps of 130 nm, 90 nm, 45 or 32 nm and even 22 nm can be produced.

Abstract: Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be improved by etching them, especially in a plasma assisted process, with fluorine, carbonyl fluoride, SF6 or NF3. Hereby, the surface is roughened so that the degree of light reflection is reduced, cracks caused from the sawing operation are prevented from proliferation, and glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed.

Abstract: Elemental fluorine and carbonyl fluoride are suitable etchants for producing microelectromechanical devices (“MEMS”). They are preferably applied as mixtures with nitrogen and argon. If applied in Bosch-type process, C4F6 is a highly suitable passivating gas.

Abstract: Compounds of general formula (I) CxFy—O—CF?CFW wherein x is 1, 2, 3, 4, 5 or 6, y=2x+1, and wherein W is F, CF3, C2F5, C3F7, or formula (II), CxFy—O—CX?CYZ wherein x and y have the meaning given above, X stands for H or F, Y stands for H or F and Z stands for H, F. CF3 or C2F5 with the proviso that at least one of X, Y or Z are H and that not more than 2 hydrogen atoms are contained in the compound of general formula (II), are suitable as or part of refrigerants, solvents, blowing agents, fire extinguishants, ORC liquids, heat transformer liquids, heat pipe liquids or aerosol-producing gases. Preferred co-refrigerants are CF3I, HFC-134a or one or more pentafluoropropenes.