Patents by Inventor Marcelo Goffman

Marcelo Goffman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon nanotube field effect transistor
    Patent number: 9502659
    Abstract: A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.
    Type: Grant
    Filed: August 16, 2007
    Date of Patent: November 22, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Jean-Philippe Bourgoin, Marcelo Goffman, Vincent Derycke, Nicolas Chimot
  • Carbon nanotube field effect transistor
    Publication number: 20080296563
    Abstract: A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.
    Type: Application
    Filed: August 16, 2007
    Publication date: December 4, 2008
    Applicant: Commissariat a l'energie atomique
    Inventors: Jean-Philippe Bourgoin, Marcelo Goffman, Vincent Derycke, Nicolas Chimot
  • Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it
    Patent number: 7439562
    Abstract: The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2 and R3 being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.
    Type: Grant
    Filed: April 22, 2003
    Date of Patent: October 21, 2008
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Stéphane Auvray, Jean-Philippe Bourgoin, Vincent Derycke, Marcelo Goffman
  • Optically-configurable nanotube or nanowire semiconductor device
    Patent number: 7323730
    Abstract: The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: January 29, 2008
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Julien Borghetti, Jean-Philippe Bourgoin, Pascale Mordant, Vincent Derycke, Arianna Filoramo, Marcelo Goffman
  • Optically-configurable nanotube or nanowire semiconductor device
    Publication number: 20070085155
    Abstract: The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
    Type: Application
    Filed: July 20, 2005
    Publication date: April 19, 2007
    Inventors: Julien Borghetti, Jean-Philippe Bourgoin, Pascale Mordant, Vincent Derycke, Arianna Filoramo, Marcelo Goffman
  • Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it
    Publication number: 20070056063
    Abstract: The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2 and R3 being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.
    Type: Application
    Filed: April 22, 2003
    Publication date: March 8, 2007
    Inventors: Stephane Auvray, Jean-Philippe Bourgoin, Vincent Derycke, Marcelo Goffman