Patents by Inventor Marcie R. Black

Marcie R. Black has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230366844
    Abstract: Provided is a method of using a nanowire diode with an array of more than 100 nanowires functionalized with binding agents that bind to one or more specific biomarkers, the nanowires being non-horizontally aligned on a substrate, and the nanowires being electrically connected to each other, to measure the presence or absence of the one or more specific biomarkers. The method comprises exposing the nanowires to a solution of interest, shining light with a wavelength between 350 nm and 700 nm on the nanowire diode, measuring electrical current that is optically induced in the nanowire diode by the light, and comparing the optically induced electrical current with and without the solution of interest present to deduce a concentration of the one or more specific biomarkers in the solution of interest.
    Type: Application
    Filed: July 19, 2023
    Publication date: November 16, 2023
    Applicants: Advanced Silicon Group, Inc., University of Iowa Research Foundation
    Inventors: Marcie R. Black, Fatima Toor, Aliasger Salem
  • Publication number: 20230258591
    Abstract: Provided is a sensor with nanowires in an aligned array. In one example, the heaviest doped region is not in the nanowire array, but in the bulk silicon substrate and the sensor is functionalized to have modified electrical properties when proteins are present.
    Type: Application
    Filed: January 12, 2023
    Publication date: August 17, 2023
    Inventors: Marcie R. Black, Edward Van Corbach, William Rever, Nicholas Paul Turner Bateman
  • Patent number: 11585807
    Abstract: Provided is a sensor with nanowires in an aligned array. In one example, the heaviest doped region is not in the nanowire array, but in the bulk silicon substrate and the sensor is functionalized to be have modified electrical properties when proteins are present.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: February 21, 2023
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Marcie R. Black, Edward Van Corbach, William Rever
  • Publication number: 20220254883
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Application
    Filed: April 27, 2022
    Publication date: August 11, 2022
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Publication number: 20220223750
    Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.
    Type: Application
    Filed: April 1, 2022
    Publication date: July 14, 2022
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
  • Patent number: 11355584
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: June 7, 2022
    Assignee: Advanced Silicon Group Technologies, LLC
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Publication number: 20200273950
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Application
    Filed: May 11, 2020
    Publication date: August 27, 2020
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Publication number: 20200264118
    Abstract: Provided is a sensor with nanowires in an aligned array. In one example, the heaviest doped region is not in the nanowire array, but in the bulk silicon substrate and the sensor is functionalized to be have modified electrical properties when proteins are present.
    Type: Application
    Filed: February 18, 2020
    Publication date: August 20, 2020
    Inventors: Marcie R. Black, Edward Van Corbach, William Rever
  • Publication number: 20200220033
    Abstract: A silicon-containing substrate including a top surface which comprises nanostructuring having a plurality of rounded depressions with depths greater than 20 nm.
    Type: Application
    Filed: March 13, 2020
    Publication date: July 9, 2020
    Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
  • Patent number: 10692971
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Grant
    Filed: August 3, 2018
    Date of Patent: June 23, 2020
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Patent number: 10629759
    Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: April 21, 2020
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
  • Publication number: 20190221683
    Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
    Type: Application
    Filed: March 20, 2019
    Publication date: July 18, 2019
    Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
  • Patent number: 10269995
    Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: April 23, 2019
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
  • Publication number: 20190011384
    Abstract: Provided is a biosensor including a nanowire array. According to an example, the nanowire may include at least 1000 nanowires per cm2, the at least 1000 nanowires per cm2 including individual nanowires each defined by a longitudinal surface and a vertical surface, the longitudinal surface being at least two times longer than the vertical surface, where the vertical surfaces of each of the individual nanowires is configured to couple to a substrate.
    Type: Application
    Filed: August 28, 2018
    Publication date: January 10, 2019
    Inventors: Marcie R. Black, Fatima Toor, Aliasger Salem
  • Publication number: 20180350908
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Application
    Filed: August 3, 2018
    Publication date: December 6, 2018
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Publication number: 20180323321
    Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.
    Type: Application
    Filed: July 17, 2018
    Publication date: November 8, 2018
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
  • Patent number: 10079322
    Abstract: In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.
    Type: Grant
    Filed: February 24, 2017
    Date of Patent: September 18, 2018
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Marcie R. Black, Jeffrey B. Miller, Michael Jura, Claire Kearns-McCoy, Joanne Yim, Brian P. Murphy
  • Publication number: 20180108791
    Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
    Type: Application
    Filed: December 11, 2017
    Publication date: April 19, 2018
    Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
  • Publication number: 20180090568
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Application
    Filed: November 29, 2017
    Publication date: March 29, 2018
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Patent number: 9911878
    Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: March 6, 2018
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Joanne Yim, Jeff Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian Murphy, Lauren Magliozzi