Patents by Inventor Marcin J. Gajek

Marcin J. Gajek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatically controlled magnetic logic device
    Patent number: 9577179
    Abstract: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: February 21, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA
    Inventors: Marcin J. Gajek, Daniel C. Worledge, William H. Butler
  • Electrostatically controlled magnetic logic device
    Patent number: 9577180
    Abstract: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: February 21, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA
    Inventors: Marcin J. Gajek, Daniel C. Worledge, William H. Butler
  • ELECTROSTATICALLY CONTROLLED MAGNETIC LOGIC DEVICE
    Publication number: 20150372222
    Abstract: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
    Type: Application
    Filed: January 29, 2015
    Publication date: December 24, 2015
    Inventors: Marcin J. Gajek, Daniel C. Worledge, William H. Butler
  • Racetrack memory with electric-field assisted domain wall injection for low-power write operation
    Patent number: 9042151
    Abstract: Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: May 26, 2015
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Marcin J. Gajek
  • RACETRACK MEMORY WITH ELECTRIC-FIELD ASSISTED DOMAIN WALL INJECTION FOR LOW-POWER WRITE OPERATION
    Publication number: 20140268982
    Abstract: Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.
    Type: Application
    Filed: August 13, 2013
    Publication date: September 18, 2014
    Applicant: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Marcin J. Gajek
  • RACETRACK MEMORY WITH ELECTRIC-FIELD ASSISTED DOMAIN WALL INJECTION FOR LOW-POWER WRITE OPERATION
    Publication number: 20140268981
    Abstract: Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Anthony J. Annunziata, Marcin J. Gajek
  • Electrostatic control of magnetic devices
    Patent number: 8836058
    Abstract: A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference layer portion contacting the free layer portion, the reference layer portion including a magnetic metallic layer, and a second electrode portion arranged on the reference layer portion.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: September 16, 2014
    Assignee: International Business Machines Corporation
    Inventors: Marcin J. Gajek, Daniel C. Worledge
  • ELECTROSTATICALLY CONTROLLED MAGNETIC LOGIC DEVICE
    Publication number: 20140217524
    Abstract: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
    Type: Application
    Filed: February 7, 2013
    Publication date: August 7, 2014
    Applicants: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Marcin J. Gajek, Daniel C. Worledge, William H. Butler
  • THIN FILM DEPOSITION AND LOGIC DEVICE
    Publication number: 20140151771
    Abstract: A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.
    Type: Application
    Filed: August 13, 2013
    Publication date: June 5, 2014
    Applicant: International Business Machines Corporation
    Inventors: Ching-Tzu Chen, Marcin J. Gajek, Simone Raoux
  • THIN FILM DEPOSITION AND LOGIC DEVICE
    Publication number: 20140151770
    Abstract: A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.
    Type: Application
    Filed: November 30, 2012
    Publication date: June 5, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ching-Tzu Chen, Marcin J. Gajek, Simone Raoux
  • Electrostatic Control of Magnetic Devices
    Publication number: 20140145278
    Abstract: A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference layer portion contacting the free layer portion, the reference layer portion including a magnetic metallic layer, and a second electrode portion arranged on the reference layer portion.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Marcin J. Gajek, Daniel C. Worledge