Patents by Inventor Marco A. Zungia

Marco A. Zungia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods
    Patent number: 10229993
    Abstract: A lateral double-diffused metal-oxide-semiconductor field effect (LDMOS) transistor includes a silicon semiconductor structure including (a) a base layer, (b) a p-type reduced surface field effect (RESURF) layer disposed over the base layer in a thickness direction, (c) a p-body disposed over the p-type RESURF layer in the thickness direction, (d) a source p+ region and a source n+ region each disposed in the p-body, (e) a high-voltage n-type laterally-diffused drain (HVNLDD) disposed adjacent to the p-body in a lateral direction orthogonal to the thickness direction, the HVNLDD contacting the p-type RESURF layer, and (f) a drain n+ region disposed in the HVNLDD. The LDMOS transistor further includes (a) a first dielectric layer disposed on the silicon semiconductor structure in the thickness direction over at least part of the p-body and the HVNLDD and (b) a first gate conductor disposed on the first dielectric layer in the thickness direction.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: March 12, 2019
    Assignee: Maxin Integrated Products, Inc.
    Inventors: John Xia, Marco A. Zungia, Badredin Fatemizadeh