Abstract: The present invention relates to a process for the production of membranes of submicrometric thickness and rolls of Ga2O3 comprising the steps of: a) implanting ions in a monocrystal semiconductor of Ga2O3, with a cleavage plane parallel to the surface, at a temperature below 500° C., making an ion beam to strike, along a non-parallel direction to the referred cleavage plane, with an energy in the range of 10-4000 keV, a flux in the range of 1×1012-1×1014 ions/cm2·s and a fluence in the range of 1×1013-1×1016 ions/cm2, forming at least one roll; b) subjecting the at least one roll formed in step a) to a thermal treatment at a temperature equal to or greater than 500° C.