Patents by Inventor Marco Bricchetti

Marco Bricchetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the removal of copper from polished boron doped silicon wafers
    Patent number: 6100167
    Abstract: A process for removing copper from a boron doped, polished silicon wafer which contains copper on its polished surface and in its interior. In the process, the wafer is annealed at a temperature of at least about 75.degree. C. to increase the concentration of copper on the polished surface of the wafer and decrease the concentration of copper in the interior of the wafer. The polished surface of the annealed wafer is then cleaned to reduce the concentration of copper thereon. In addition, the annealing step is carried out at a temperature and a time such that the concentration of copper on the polished surface of the silicon will not increase by a factor of more than two upon storage of the annealed and cleaned wafer at room temperature for a period of 5 months.
    Type: Grant
    Filed: May 21, 1998
    Date of Patent: August 8, 2000
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Robert J. Falster, Fabrizio Leoni, Marco Bricchetti, Alessandro Corradi