Abstract: An optical coupling device for producing an optical coupling between an optical fiber and photonic circuits. The device includes a substrate and at least two coupling stages integrated on the substrate, and: each coupling stage includes a grating coupler configured to implement an optical coupling centered on a respective central wavelength; the multiple grating couplers are superimposed on top of each other, along an axis orthogonal to the substrate plane; at least one of the grating couplers is insensitive to polarization. The device can form, for example, a wide band coupler, wherein each portion of the spectrum is coupled by a coupling stage. As an alternative, such a device can form an emitting and receiving coupler, where emission and reception spectra are each coupled by a respective coupling stage.

Abstract: A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon.

Abstract: An optical coupling device for producing an optical coupling between an optical fiber and photonic circuits. The device includes a substrate and at least two coupling stages integrated on the substrate, and: each coupling stage includes a grating coupler configured to implement an optical coupling centered on a respective central wavelength; the multiple grating couplers are superimposed on top of each other, along an axis orthogonal to the substrate plane; at least one of the grating couplers is insensitive to polarization. The device can form, for example, a wide band coupler, wherein each portion of the spectrum is coupled by a coupling stage. As an alternative, such a device can form an emitting and receiving coupler, where emission and reception spectra are each coupled by a respective coupling stage.

Abstract: A flexible tile-based place-and-route methodology utilizes pre-generated physical layer (PHY) tiles to greatly simplify the task of automatically generating routing solutions between associated PHYs disposed on a memory device and a corresponding processor for any selected floorplan positioning of the memory device relative to the corresponding processor. The PHY tiles are pre-generated software-based layout descriptions that model the densely-packed 2D contact PHY pad arrays, and also comprise partial layout features including signal line segments that escape routing pins from the 2D contact pads to an orthogonal (straight-line) edge of the PHY tile and disposed in design-rule-compliant spaced-apart arrangements. Optional 45-degree jog line segments are utilized to efficiently correct for alignment offsets between the memory PHY and processor PHY.

Abstract: The invention relates to an optoelectronic device for generating a frequency comb comprising a laser source (2), a ring microresonator (3) comprising a resonant ring (20) made of a third order optically non-linear material with abnormal dispersion regime. It also comprises a spectral tuning device comprising a junction guide (30) coupled to the resonant ring, electrical biasing means (40) adapted to apply an electrical voltage to the junction, and a control unit (42) adapted to modify the value of the electrical voltage until at least one dissipative temporal soliton is formed in the resonant ring.

Abstract: The invention relates to an optoelectronic device for generation of a frequency comb comprising: a laser source (2); an optical micro-resonator (3), comprising a resonant ring (20); at least one waveguide (30) optically coupled to the resonant ring (20), having an effective index associated with a fundamental optical mode supported by the filtering guide (30) equal to an effective index associated with an optical higher order mode supported by the resonant ring (20).

Abstract: The invention relates to an optoelectronic device for generating a frequency comb comprising a laser source (2), a ring microresonator (3) comprising a resonant ring (20) made of a third order optically non-linear material with abnormal dispersion regime. It also comprises a spectral tuning device comprising a junction guide (30) coupled to the resonant ring, electrical biasing means (40) adapted to apply an electrical voltage to the junction, and a control unit (42) adapted to modify the value of the electrical voltage until at least one dissipative temporal soliton is formed in the resonant ring.

Abstract: The invention relates to an optoelectronic device for generation of a frequency comb comprising: a laser source (2); an optical micro-resonator (3), comprising a resonant ring (20); at least one waveguide (30) optically coupled to the resonant ring (20), having an effective index associated with a fundamental optical mode supported by the filtering guide (30) equal to an effective index associated with an optical higher order mode supported by the resonant ring (20).

Abstract: A flexible tile-based place-and-route methodology utilizes pre-generated physical layer (PHY) tiles to greatly simplify the task of automatically generating routing solutions between associated PHYs disposed on a memory device and a corresponding processor for any selected floorplan positioning of the memory device relative to the corresponding processor. The PHY tiles are pre-generated software-based layout descriptions that model the densely-packed 2D contact PHY pad arrays, and also comprise partial layout features including signal line segments that escape routing pins from the 2D contact pads to an orthogonal (straight-line) edge of the PHY tile and disposed in design-rule-compliant spaced-apart arrangements. Optional 45-degree jog line segments are utilized to efficiently correct for alignment offsets between the memory PHY and processor PHY.

Abstract: A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon.