Patents by Inventor Marco D'Avino

Marco D'Avino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RF amplifier
    Patent number: 10284148
    Abstract: An RF amplifier is described including an input, an output, a parallel arrangement of a first branch and at least one further branch, each branch comprising a bipolar transistor in a degenerative emitter configuration having a base coupled to the input, a collector coupled to a common collector node, and an emitter degeneration impedance arranged between the emitter and a common rail. The common collector node is coupled to the output, the base of the first branch bipolar transistor is biased at a first bias voltage and the base of the at least one further branch bipolar transistor is biased at a bias voltage offset from the first bias voltage. In operation of the RF amplifier a IM3 distortion current output by the first branch bipolar transistor is in antiphase to a IM3 distortion current output by the at least one further branch bipolar transistor.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: May 7, 2019
    Assignee: NXP B.V.
    Inventors: Marco D'Avino, Mark Pieter van der Heijden, Michel Wilhelmus Arnoldus Groenewegen, Leonardus Cornelis Nicolaas de Vreede
  • RF AMPLIFIER
    Publication number: 20180198420
    Abstract: An RF amplifier is described including an input, an output, a parallel arrangement of a first branch and at least one further branch, each branch comprising a bipolar transistor in a degenerative emitter configuration having a base coupled to the input, a collector coupled to a common collector node, and an emitter degeneration impedance arranged between the emitter and a common rail. The common collector node is coupled to the output, the base of the first branch bipolar transistor is biased at a first bias voltage and the base of the at least one further branch bipolar transistor is biased at a bias voltage offset from the first bias voltage. In operation of the RF amplifier a IM3 distortion current output by the first branch bipolar transistor is in antiphase to a IM3 distortion current output by the at least one further branch bipolar transistor.
    Type: Application
    Filed: January 8, 2018
    Publication date: July 12, 2018
    Inventors: Marco D'Avino, Mark Pieter van der Heijden, Michel Wilhelmus Arnoldus Groenewegen, Leonardus Cornelis Nicolaas de Vreede