Patents by Inventor Marco Faber

Marco Faber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9981282
    Abstract: In a glue stick for a hot-glue device, in particular a glue gun, having an external contour which has a length and a diameter, a given ratio of length to diameter is in the range from 1:1 to 7:1.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: May 29, 2018
    Assignee: Robert Bosch GmbH
    Inventors: Marco Faber, Asmir Rojo, Timo Etzel
  • Patent number: 9385263
    Abstract: A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: July 5, 2016
    Assignee: SCHOTT SOLAR AG
    Inventors: Joerg Horzel, Dieter Franke, Gabriele Blendin, Marco Faber, Wilfried Schmidt
  • Publication number: 20160151802
    Abstract: In a glue stick for a hot-glue device, in particular a glue gun, having an external contour which has a length and a diameter, a given ratio of length to diameter is in the range from 1:1 to 7:1.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 2, 2016
    Inventors: Marco Faber, Asmir Rojo, Timo Etzel
  • Publication number: 20110278702
    Abstract: A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.
    Type: Application
    Filed: December 3, 2009
    Publication date: November 17, 2011
    Inventors: Joerg Horzel, Dieter Franke, Gabriele Blendin, Marco Faber, Wilfried Schmidt