Abstract: A process roller for receiving and guiding substrates in strip form in vacuum coating installations. The process roller comprises a heater located inside the process roller, in the form of an elongated radiant heater, and also a cylindrical lateral surface for receiving a substrate in strip form, the process roller being mounted rotatably about an axis of rotation in a vacuum process chamber. A particularly uniform temperature distribution can be achieved on the process roller's lateral surface by the process roller (2) being configured in a vacuum-tight manner, by the lateral surface (3) of the process roller (2) being connected in a vacuum-tight manner to two end caps (4, 5), which have a flattened, outwardly curved hemispherical form, by the interior space of the process roller (2) being connected to a vacuum connection (6), and by the radiant heater (8) extending into the region of the end caps (4, 5).

Abstract: A process roller for receiving and guiding substrates in strip form in vacuum coating installations. The process roller comprises a heater located inside the process roller, in the form of an elongated radiant heater, and also a cylindrical lateral surface for receiving a substrate in strip form, the process roller being mounted rotatably about an axis of rotation in a vacuum process chamber. A particularly uniform temperature distribution can be achieved on the process roller's lateral surface by the process roller (2) being configured in a vacuum-tight manner, by the lateral surface (3) of the process roller (2) being connected in a vacuum-tight manner to two end caps (4, 5), which have a flattened, outwardly curved hemispherical form, by the interior space of the process roller (2) being connected to a vacuum connection (6), and by the radiant heater (8) extending into the region of the end caps (4, 5).

Abstract: By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes within a metallization layer of semiconductor devices may be efficiently monitored and/or modified. For instance, OBIRCH and SEI techniques may be used in combination with the automated data recording and manipulation, thereby providing an efficient means for in situ failure analysis, defect identification, for any dynamic degradation processes in interconnects and interlayer dielectrics.

Abstract: By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes within a metallization layer of semiconductor devices may be efficiently monitored and/or modified. For instance, OBIRCH and SEI techniques may be used in combination with the automated data recording and manipulation, thereby providing an efficient means for in situ failure analysis, defect identification, for any dynamic degradation processes in interconnects and interlayer dielectrics.